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SMAJ200A PDF预览

SMAJ200A

更新时间: 2024-11-14 22:05:35
品牌 Logo 应用领域
力特 - LITTELFUSE 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
4页 173K
描述
Silicon Avalanche Diodes - 400W Surface Mount Transient Voltage Supressors

SMAJ200A 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:1.46
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:443930Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Diodes Moulded
Samacsys Footprint Name:DO-214AC (SMA)_2Samacsys Released Date:2017-08-29 08:42:25
Is Samacsys:N其他特性:LOW INDUCTANCE, EXCELLENT CLAMPING CAPABILITY
最大击穿电压:247 V最小击穿电压:224 V
击穿电压标称值:235.5 V最大钳位电压:324 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:400 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SMAJ200A 数据手册

 浏览型号SMAJ200A的Datasheet PDF文件第2页浏览型号SMAJ200A的Datasheet PDF文件第3页浏览型号SMAJ200A的Datasheet PDF文件第4页 
Silicon Avalanche Diodes  
400W Surface Mount Transient Voltage Supressors  
®
RoHS  
SMAJ Series  
FEATURES  
RoHS compliant  
For surface mounted applications in order to optimize  
board space  
Low profile package  
Built-in strain relief  
Glass passivated junction  
Low inductance  
Excellent clamping capability  
Repetition Rate (duty cycle): 0.01%  
Fast response time: typically less than 1.0ps from 0 Volts to  
V(BR) for unidirectional types  
Typical IR less than 1A above 10V  
MAXIMUM RATINGS AND CHARACTERISTICS  
@25˚C AMBIENT TEMPERATURE (unless otherw ise noted)  
High Temperature soldering: 250˚C/10 seconds at terminals  
Plastic package has Underwriters Laboratory  
Flammability 94V-O  
PARAMETER  
VALUE  
SYMBOL  
UNIT  
Agency Approvals: Recognized under the Components Program  
of Underwriters Laboratories.  
Peak pulse power Dissipation on  
10/1000µs waveform  
Min  
400  
P
Watts  
PPM  
(note 1,2, FIG.1)  
Agency File Number: E128662  
Peak pulse current of on 10\1000µs  
waveform (note 1, FIG.3)  
I
PPM  
Amps  
Amps  
SEE TABLE 1  
40  
Peak forward Surge Current, 8.3ms  
Single Half SIne Wave Superimposed  
on Rated Load, (JEDEC Method)  
(note 2.3)  
I
FSM  
Operating junction and Storage  
Temperature Range  
T
T
°C  
-55 to +150  
j, sTG  
Notes:  
1. Non-repetitive current pulse, per Fig.3 and derated above T =  
A
25˚C per Fig.2  
2
2. Mounted on 5.0mm (0.03mm thick) Copper Pads to each  
terminal  
3. 8.3 ms single half sine-wave, or equivalent square wave, Duty  
cycle= 4 pulses per minute maximum.  
ORDERING INFORMATION  
Mechanical Specifications:  
Weight:  
Case:  
0.002ounce, 0.061 gram  
JEDEC DO-214AC Molded Plastic over  
glass passivated junction  
Any  
Color band denotes cathode except  
Bipolar  
C A  
SMAJ  
Voltage  
Bi-Directional  
Mounting Position:  
Polarity:  
5% Voltage Tolerance  
Terminal:  
Solder Plated, solderable per  
MIL-STD-750, Method 2026  
Standard Packaging: 12mm tape (EIA STD RS-481)  
Tape and reeled (5000 pcs)  
254  
www. lit t elf us e. c om  

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