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SMAJ200A PDF预览

SMAJ200A

更新时间: 2024-11-15 20:20:43
品牌 Logo 应用领域
扬杰 - YANGJIE 局域网光电二极管
页数 文件大小 规格书
7页 241K
描述
Trans Voltage Suppressor Diode, 400W, 200V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

SMAJ200A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:unknown
风险等级:5.69Is Samacsys:N
其他特性:EXCELLENT CLAMPING CAPABILITY最大击穿电压:247 V
最小击穿电压:224 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:1 W最大重复峰值反向电压:200 V
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SMAJ200A 数据手册

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RoHS  
SMAJ SERIES  
COMPLIANT  
Surface Mount Transient Voltage Suppressor Diodes  
Uni-directional  
Features  
For surface mounted applications  
Low-profile package  
Ideal for automated placement  
Available in Unidirectional and Bidirectional  
400 W peak pulse power capability with a 10/1000 μs  
waveform  
Low incremental surge resistance, excellent clamping  
capability  
Very fast response time  
High temperature soldering guaranteed: 260 °C/10 s at  
terminals  
Bi-directional  
Meets MSL level 1  
Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Typical Applications  
Use in sensitive electronics protection against voltage transients  
induced by inductive load switching and lighting on ICs, MOSFET,  
signal lines of sensor units for consumer, computer, industrial,  
telecommunication.  
Mechanical Data  
ackage: DO-214AC (SMA)ꢀ ꢀ  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
For uni-directional types the band denotes cathode  
Polarity:  
end, no marking on bi-directional types ꢀ  
(T =25Unless otherwise specified  
Maximum Ratings  
a
PARAMETER  
SYMBOL  
Max  
400  
UNIT  
W
Peak power dissipation, with a 10/1000us waveform  
(1) (2) (Fig.1)  
PPPM  
Peak pulse current, with a 10/1000us waveform  
(1)  
IPPM  
A
See Next Table  
1.0  
Power dissipation, on infinite heat sink at TL=75℃  
PD  
W
Peak forward surge current, 8.3 ms single  
half sine-wave unidirectional only (2)  
IFSM  
A
40  
Operating junction and storage temperature range  
TJ,TSTG  
-55 to +150  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
VALUE  
3.5/5.0  
1.5  
PARAMETER  
SYMBOL  
UNIT  
V
Maximum instantaneous forward voltage  
@ at 25A for unidirectional only (3)  
VF  
VF  
Maximum instantaneous forward voltage  
@ at 1A for unidirectional only  
V
1 / 7  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S096  
Rev. 2.3, 17-Apr-19  
www.21yangjie.com  

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