Datasheet > SMA6L12A

SMA6L12A

更新时间： 2024-11-20 11:59:07

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	1133K
描述
SMA6L Series

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SMA6L12A 数据手册

TransientVoltage Suppression Diodes

Surface Mount – 600W > SMA6L series

RoHS

SMA6L Series

Description

The SMA6L series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

SMA low proﬁle package has the same electronical

performance as the SMB package but with lowest height

proﬁles (1.1mm) in the industry.

Features

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

• SMA low proﬁle package:

less than 1.1 mm

• Same power as standard

.• Low inductance,

excellent clamping

capability

Parameter

Symbol

P_PPM

Value

600

Unit

SMB devices (600 W)

• Fast response time:

typically less than 1.0ns

from 0 Volts to V_BRmin

• Built-in strain relief

• Glass passivated junction

•Typical I_Rless than 1µA

above 12V

• High temperature

soldering: 260°C/40

seconds at terminals

• Footprint compatibility

with standard SMA and

SMB products (easy to

layout)

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

15kV(Air), 8kV (Contact)

• ESD protection of data

lines in accordance with

IEC 61000-4-2 (IEC801-2)

Peak Pulse Power Dissipation at

T_A=25ºC by 10x1000µs waveform

(Fig.2)(Note 1), (Note 2)

Power Dissipation on inﬁnite heat

sink atT_A=50^OC

P_M(AV)

I_FSM

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

Maximum Instantaneous Forward

Voltage at 25A for Unidirectional

only

V_F

3.5V

•Typical maximum

temperature coefﬁcient

ΔV_BR= 0.1% x V_BR@25°C x ΔT

Operating Junction and Storage

Temperature Range

T_J, T_STG-65 to 150

°C

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

• Matee tin lead–free plated

• Halogen free and RoHS

compliant

TypicalThermal Resistance Junction

to Ambient

200

Notes:

• EFT protection of data

lines in accordance with

IEC 61000-4-4 (IEC801-4)

1. Non-repetitive current pulse, per Fig.4 and derated aboveT_A=25ºC per Fig. 3.

2. Mounted on 5.0x5.0mm copper pad to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

device only.

Applications

TVS devices are ideal for the protection of I/O Interfaces,

_CCbus and other vulnerable circuits used inTelecom,

Computer, Industrial and Consumer electronic applications.

SMA6L Series

Speciﬁcations are subject to change without notice.

Please refer to http://www.Littelfuse.com/series/SMA6L.html for current information.

Revised: April 12, 2012

12 3 4 5 6

中文翻译

下载PDF

SMA6L12A 替代型号

型号	品牌	替代类型	描述	数据表
TPSMA6L12A	LITTELFUSE	功能相似	Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

与SMA6L12A相关器件

型号	品牌	获取价格	描述	数据表
SMA6L12CA	LGE	获取价格	瞬态抑制二极管
SMA6L130A	LITTELFUSE	获取价格	SMA6L系列专门用于保护敏感电子设备，使其免受雷击和其他瞬态电压事件带来的瞬态电压影响。
SMA6L13A	LITTELFUSE	获取价格	SMA6L Series
SMA6L13A	LGE	获取价格	瞬态抑制二极管
SMA6L13A	YAGEO	获取价格	瞬态抑制二极管 (一般)
SMA6L13CA	LGE	获取价格	瞬态抑制二极管
SMA6L14A	LITTELFUSE	获取价格	SMA6L Series
SMA6L14A	LGE	获取价格	瞬态抑制二极管
SMA6L14A	YAGEO	获取价格	瞬态抑制二极管 (一般)
SMA6L14CA	LGE	获取价格	瞬态抑制二极管

与SMA6L12A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

24
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

16
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

48
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

SMA6L12A

SMA6L12A 数据手册

SMA6L12A 替代型号

与SMA6L12A相关器件

与SMA6L12A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMA6L12A

SMA6L12A 数据手册

SMA6L12A 替代型号

与SMA6L12A相关器件

与SMA6L12A相关文章

您还可以找

您在本页遇到什么问题？