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SMA6J20AHM3/5A PDF预览

SMA6J20AHM3/5A

更新时间: 2024-11-16 22:43:27
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 92K
描述
TVS DIODE 20V 31.4V DO214AC

SMA6J20AHM3/5A 技术参数

生命周期:Obsolete包装说明:R-PDSO-C2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.68
其他特性:EXCELLENT CLAMPING CAPABILITY最大击穿电压:24.5 V
最小击穿电压:22.2 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:4 W
参考标准:AEC-Q101最大重复峰值反向电压:20 V
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

SMA6J20AHM3/5A 数据手册

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SMA6J5.0A thru SMA6J28A  
www.vishay.com  
Vishay General Semiconductor  
®
Surface-Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Available in uni-directional polarity only  
• Excellent clamping capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
SMA (DO-214AC)  
LINKS TO ADDITIONAL RESOURCES  
TYPICAL APPLICATIONS  
3
D
3
D
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
3D Models  
PRIMARY CHARACTERISTICS  
VBR  
6.4 V to 34.4 V  
MECHANICAL DATA  
VWM  
5.0 V to 28 V  
600 W  
Case: SMA (DO-214AC)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant and commercial grade  
P
PPM (10 x 1000 μs)  
PPPM (8 x 20 μs)  
PD at TA = 50 °C  
IFSM  
4000 W  
4 W  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test  
50 A  
TJ max.  
Polarity  
Package  
150 °C  
Polarity: Color band denotes cathode end  
Uni-directional  
SMA (DO-214AC)  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
600  
UNIT  
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2)  
Peak pulse power dissipation with a 8/20 μs waveform  
Peak pulse current with a 10/1000 μs waveform (1)(2)  
PPPM  
W
4000  
IPPM  
See next table  
A
Peak pulse current with a 8/20 μs waveform  
Power dissipation on infinite heatsink, TA = 50 °C  
Peak forward surge current 8.3 ms single half sine-wave  
Operating junction and storage temperature range  
PD  
IFSM  
4.0  
50  
W
A
TJ, TSTG  
-55 to +150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 1 and derated above TA = 25 °C per fig. 2  
Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 20-Jul-2020  
Document Number: 89115  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SMA6J20AHM3/5A 替代型号

型号 品牌 替代类型 描述 数据表
SMA6J20A-M3/61 VISHAY

完全替代

Trans Voltage Suppressor Diode, 600W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMA6J20A-M3/5A VISHAY

完全替代

Trans Voltage Suppressor Diode, 600W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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