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SMA6F6.5A

更新时间: 2024-01-19 19:53:54
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 101K
描述
Surface Mount TRANSZORB® Transient Voltage Suppressors

SMA6F6.5A 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.78
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SMA6F6.5A 数据手册

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New Product  
SMA6F5.0A thru SMA6F20A  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Very low profile - typical height of 0.95 mm  
SlimSMATM  
• Ideal for automated placement  
• Uni-directional only  
• Excellent clamping capability  
• Peak pulse power:  
- 600 W (10/1000 μs)  
- 4 kW (8/20 μs)  
Bottom View  
Top View  
• ESD capability: IEC 61000-4-2 level 4  
- 15 kV (air)  
DO-221AC  
- 8 kV (contact)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
VWM  
5.0 V to 20 V  
Halogen-free according to IEC 61249-2-21 definition  
PPPM (10 x 1000 μs)  
600 W  
4000 W  
6 W  
PPPM (8 x 20 μs)  
MECHANICAL DATA  
PD at TM = 55 °C  
Case: DO-221AC (SlimSMA)  
TJ max.  
175 °C  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
commercial grade  
TYPICAL APPLICATIONS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
600  
UNIT  
with a 10/1000 μs waveform  
Peak pulse power dissipation  
(1)  
PPPM  
W
with a 8/20 μs waveform  
4000  
with a 10/1000 μs waveform  
Peak pulse current  
(1)  
IPPM  
See next table  
A
with a 8/20 μs waveform  
(2)  
T
M = 55 °C  
PD  
6
Power dissipation  
W
°C  
(3)  
TA = 25 °C  
PD  
1.0  
Storage temperature range  
TSTG  
TJ  
- 65 to + 175  
- 55 to + 175  
Operating junction temperature range  
Notes  
(1)  
(2)  
(3)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Power dissipation mounted on infinite heatsink  
Power dissipation mounted on minimum recommended pad layout  
Revision: 23-Nov-11  
Document Number: 89458  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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