SMA6F5.0A thru SMA6F130A
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Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
Axis Title
10
10000
1000
100
10 000
1000
100
10000
1000
100
TJ = 25 °C,
f = 1.0 MHz,
Vsig = 50 mVp-p
Measured at zero bias
1
____
_____
SMA6F22A thru 130A
SMA6F5.0A thru 20A
Measured at stand-off
voltage, V WM
0.1
10
10 000
10
10
10
100
1000
0
50
100
150
td - Pulse Width s)
VWM - Reverse Stand-off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
Axis Title
Axis Title
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
10000
1000
100
100
75
50
25
0
10000
1000
100
TA = TM, mounted on
infinite heatsink
Mounted on FR4 PCB, 2 oz.
standard footprint
10
10
0
25
50
75 100 125 150 175 200
0
25
50
75 100 125 150 175 200
TA - Ambient Temperature (°C)
TJ - Initial Temperature (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Power Dissipation Derating Curve
Axis Title
150
1000
100
10
10000
1000
100
TJ = 25 °C
Pulse width (td) is
defined as the point
where the peak current
tr = 10 μs
tr = 8 μs
Junction to ambient
Peak value
IPPM
decays to 50 % of IPPM
100
50
0
Half value - IPP
IPPM
2
td = 1000 μs,
td = 20 μs
td
1
0.01
10
1000
0
1
2
3
4
0.1
1
10
100
t - Pulse Duration (s)
t - Time (ms)
Fig. 3 - Pulse Waveform
Fig. 6 - Typical Transient Thermal Impedance
Notes
•
•
Fig.1 - Power calculation is based on IPPM times defined maximum clamping voltage by pulse width
Fig.1 - 10 000 μs PPPM is actual test for VWM ≤ 60 V types, over 60 V types 10 000 μs PPPM is curve extensional value
Revision: 17-Sep-2021
Document Number: 89458
4
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