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SMA6F5.0A-M3/6A PDF预览

SMA6F5.0A-M3/6A

更新时间: 2024-02-21 08:40:54
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
5页 112K
描述
Trans Voltage Suppressor Diode, 4000W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-221AC, SMA, 2 PIN

SMA6F5.0A-M3/6A 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:21 weeks风险等级:1.53
其他特性:EXCELLENT CLAMPING CAPABILITY最大击穿电压:7.07 V
最小击穿电压:6.4 V击穿电压标称值:6.735 V
最大钳位电压:13.4 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-221ACJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:4000 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:1 W参考标准:IEC61000-4-2
最大重复峰值反向电压:5 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

SMA6F5.0A-M3/6A 数据手册

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SMA6F5.0A thru SMA6F20A  
www.vishay.com  
Vishay General Semiconductor  
®
Surface Mount TRANSZORB Transient Voltage Suppressors  
FEATURES  
SlimSMATM  
• Very low profile - typical height of 0.95 mm  
• Ideal for automated placement  
• Uni-directional only  
• Excellent clamping capability  
• Peak pulse power:  
- 600 W (10/1000 μs)  
- 4 kW (8/20 μs)  
Bottom View  
Top View  
DO-221AC  
• ESD capability: IEC 61000-4-2 level 4  
- 15 kV (air)  
- 8 kV (contact)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRIMARY CHARACTERISTICS  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
VBR  
6.4 V to 24.5 V  
VWM  
5.0 V to 20 V  
600 W  
MECHANICAL DATA  
P
PPM (10 x 1000 μs)  
Case: DO-221AC (SlimSMA)  
PPPM (8 x 20 μs)  
4000 W  
Molding compound meets UL 94 V-0 flammability rating  
P
D at TM = 55 °C  
6 W  
Base P/N-M3  
- halogen-free, RoHS-compliant, and  
TJ max.  
175 °C  
commercial grade  
Polarity  
Uni-directional  
DO-221AC (SlimSMA)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Package  
M3 suffix meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
600  
UNIT  
with a 10/1000 μs waveform  
Peak pulse power dissipation  
(1)  
PPPM  
W
with a 8/20 μs waveform  
4000  
with a 10/1000 μs waveform  
Peak pulse current  
(1)  
IPPM  
See next table  
A
W
°C  
with a 8/20 μs waveform  
(2)  
T
M = 55 °C  
PD  
6
Power dissipation  
(3)  
TA = 25 °C  
PD  
1.0  
Storage temperature range  
TSTG  
TJ  
-65 to +175  
-55 to +175  
Operating junction temperature range  
Notes  
(1)  
(2)  
(3)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Power dissipation mounted on infinite heatsink  
Power dissipation mounted on minimum recommended pad layout  
Revision: 10-Dec-13  
Document Number: 89458  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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