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SMA5J18A PDF预览

SMA5J18A

更新时间： 2024-12-01 09:22:03
品牌 Logo 应用领域
威世 - VISHAY 瞬态抑制器二极管
页数 文件大小 规格书
5页 91K
描述
High Power Density Surface Mount TRANSZORB?

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中文翻译

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SMA5J18A 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.88
Is Samacsys：N击穿电压标称值：21.05 V
最大钳位电压：29.2 V二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：e0极性：UNIDIRECTIONAL
最大重复峰值反向电压：18 V子类别：Transient Suppressors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

SMA5J18A 数据手册

 浏览型号SMA5J18A的Datasheet PDF文件第2页浏览型号SMA5J18A的Datasheet PDF文件第3页浏览型号SMA5J18A的Datasheet PDF文件第4页浏览型号SMA5J18A的Datasheet PDF文件第5页 
SMA5J5.0A thru SMA5J40CA  
www.vishay.com  
Vishay General Semiconductor  
®
High Power Density Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AC (SMA)  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
5.0 V to 40 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
PPPM  
500 W  
IFSM (uni-directional only)  
TJ max.  
40 A  
150 °C  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SMA5J40CA).  
Electrical characteristics apply in both directions.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
IPPM  
See next table  
40  
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IFSM  
A
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 26-Jan-12  
Document Number: 88875  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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