Datasheet > SM8S33A

SM8S33A

更新时间： 2024-02-25 11:12:57

品牌	Logo	应用领域
优恩 - UNSEMI		二极管测试电子局域网
页数	文件大小	规格书
4页	2698K
描述
用于汽车电子保护，可通过ISO7637-5A5B测试标准。

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SM8S33A 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.7
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	处于峰值回流温度下的最长时间：	10
Base Number Matches：	1

SM8S33A 数据手册

Surface Mount Transient Voltage Suppressors (TVS)

SM8S Series

10 To 43 V

6600W

Description

The SM8S series is designed specifically to protect sensitive

electronic equipment from voltage transients induced by lightning

and other transient voltage events.

Features

Junction passivation optimized design passivated anisotropic

rectifier technology

T_J=175°C capability suitable for high reliability and automotive

requirement

DO-218AB

Available in uni-directional polarity only

Low leakage current

Functional Diagram

Low forward voltage drop

High surge capability

Meets ISO7637-2 surge specification (varied by test condition)

Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C

Cathode

Anode

Uni-direction

AEC-Q101 qualified

Compliant to RoHS Directive 2002/95/EC and in accordance

to WEEE 2002/96/EC

Primary Characteristics

VWM

P_PPM(10/1000µs)

P_PPM(10 /10000μs)

P_D

10V to 43V

Applications

Use in sensitive electronics protection against voltage transients

induced by inductive load switching and lighting, especially for

automotive load dump protection application.

6600W

5200W

I_FSM

700A

T_Jmax.

175°C

Maximum Ratings and Thermal Characteristics (T_A=25℃ unless otherwise noted)

Parameter

with 10/1000µs waveform

Symbol

P_PPM

Value

6600

Unit

Peak Pulse Power Dissipation

Watts

with 10/10000µs waveform

5200

Power Dissipation on Infinite Heat Sink at T_A=25°C (Fig.1)

Peak Pulse Current with a 10/1000µs waveform

P_D

8.0

Watt

Amps

°C

(1)

I_PPM

See Next Table

700

Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)

Operating junction and Storage Temperature Range

Typical thermal resistance, junction to case

I_FSM

T_J, T_STG

R _θJC

- 55 to + 175

0.90

°C /Watt

Notes:

1. Non-repetitive current pulse derated above T_A=25°C

UN Semiconductor Co., Ltd.

www.unsemi.com.tw

@ UN Semiconductor Co., Ltd. 2013

Revision October 18, 2013

1 / 4

Specifications are subject to change without notice.

Please refer to www.unsemi.com.tw for current information.

12 3 4

下载PDF

与SM8S33A相关器件

型号	品牌	描述	获取价格	数据表
SM8S33A-2D	VISHAY	Trans Voltage Suppressor Diode, 5200W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-	获取价格
SM8S33A-AL	JJM	车规瞬态电压抑制二极管	获取价格
SM8S33A-AU	PANJIT	DO-218AB	获取价格
SM8S33AD	SOCAY	Surface Mount Transient Voltage Suppressors (TVS)	获取价格
SM8S33A-E3/2D	VISHAY	Trans Voltage Suppressor Diode, 5200W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-	获取价格
SM8S33A-E3/2E	VISHAY	8W,33V 5%,SMD PAR	获取价格