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SM8S13A PDF预览

SM8S13A

更新时间: 2024-09-23 20:17:39
品牌 Logo 应用领域
鲁光 - LGE 局域网二极管
页数 文件大小 规格书
3页 6206K
描述
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SM8S13A 技术参数

Case Style:DO-218ABPpk(W):6600
MIN_(V):14.4MAX_(V):15.9
Vwm_(V):13Ir_(uA):10
Ippm_(A):307Vc_(V):21.5
class:Diodes

SM8S13A 数据手册

 浏览型号SM8S13A的Datasheet PDF文件第2页浏览型号SM8S13A的Datasheet PDF文件第3页 
SM8S Series  
Automotive Protection  
Surface Mount  
Transient Voltage Suppressors  
Working Voltage: 10 to 43 V  
Peak Pulse Power: 6600 W  
Features  
˗ Optimized glass passivated chip  
˗
TJ = 175 °C capability suitable for high  
reliability and automotive requirement  
˗
6600 W peak pulse power capability with a  
10/1000 ȝs waveform, repetitive rate (duty  
cycle):0.01 %  
PACKAGE OUTLINE DIMENSIONS(millimeters)  
˗
Meet ISO 7637-2 5a/5b and ISO 16750 load  
dump test (varied by test condition)  
˗ AEC-Q101 qualified  
˗ Low leakage current  
˗ Low forward voltage drop  
˗ Uni-directional polarity  
˗ Excellent clamping capability  
˗ Very fast response time  
˗ RoHS compliant  
Mechanical Data  
˗ Case: DO-218AB  
˗ Molding compound: UL94V-0 flammability  
˗ Polarity: Heatsink is anode  
DO-218AB  
Maximum Ratings(TA=25ɗ unless otherwise noted)  
Parameter  
Symbol  
PPP  
PPP  
IPP  
PD  
IFSM  
TJ, TSTG  
Value  
6600  
5200  
UNIT  
W
W
A
W
A
Peak power dissipation with a 10/1000ȝs waveform(1)  
Peak power dissipation with a 10/10,000ȝs waveform  
Peak pulse current wih a 10/1000ȝs waveform(1)  
Power dissipation on infinite heatsink at TL = 25 °C  
See Next Table  
8.0  
Peak forward surge current 8.3 ms single half sine-  
Operating junction and storage temperature range  
700  
–55 to +175  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.2 and derated above TA= 25 °C per Fig.1  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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