Datasheet > SM8A03NSF

SM8A03NSF

更新时间： 2022-05-14 22:20:17

品牌	Logo	应用领域
大中积体 - SINOPWER		/
页数	文件大小	规格书
11页	197K
描述
N-Channel Enhancement Mode MOSFET

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数据手册

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SM8A03NSF 数据手册

SM8A03NSF/SM8A03NSFP/SM8A03NSW

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (T_A=25°C Unless Otherwise Noted)

V_DSS

V_GSS

T_J

Drain-Source Voltage

800

±30

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

300μs Pulse Drain Current Tested

150

°C

T_STG

I_S

-55 to 150

8 ^a

I_DP

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

16 ^a

8 ^a

5 ^a

I_D

Continuous Drain Current

138

Maximum Power Dissipation for

TO-220/TO-247

P_D

Maximum Power Dissipation for

TO-220FP

P_D

12.5

Thermal Resistance-Junction to Case for

TO-220/TO-247

R_qJC

0.9

Thermal Resistance-Junction to Case for

TO-220FP

°C/W

R_qJC

R_qJA

Thermal Resistance-Junction to Ambient

62.5

Drain-Source Avalanche Ratings

dv/dt ^bMOSFET dv/dt ruggedness

130

2.5

0.3

V/ns

E_AS

I_AR

Avalanche Energy, Single Pulsed

Avalanche Current

E_AR

Repetitive Avalanche Energy

Note a：limited by maximum junction temperature.

Note b：V_DS=640V, I_D=8A.

Note c：I_D=1.8A, V_DD=50V, T_j=25°C.

Note d：Repetitive Rating : Pulse width limited by maximum junction temperature.

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Rev. A.3 - March, 2015

123 4 5 6 7...11

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