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SM74611KTTR PDF预览

SM74611KTTR

更新时间： 2024-01-24 19:41:26
品牌 Logo 应用领域
德州仪器 - TI 测试整流二极管
页数 文件大小 规格书
11页 709K
描述

0.5V 至 30V 智能旁路二极管

| KTT | 3 | -40 to 125

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中文翻译

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SM74611KTTR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：R-PSSO-G3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：1.68其他特性：IR-NOM, LOW LEAKAGE CURRENT
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G3JESD-609代码：e3
湿度敏感等级：3元件数量：1
相数：1端子数量：2
最高工作温度：125 °C最低工作温度：-40 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：245最大功率耗散：0.575 W
最大重复峰值反向电压：28 V最大反向电流：0.3 µA
反向测试电压：28 V子类别：Rectifier Diodes
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

SM74611KTTR 数据手册

 浏览型号SM74611KTTR的Datasheet PDF文件第2页浏览型号SM74611KTTR的Datasheet PDF文件第3页浏览型号SM74611KTTR的Datasheet PDF文件第4页浏览型号SM74611KTTR的Datasheet PDF文件第5页浏览型号SM74611KTTR的Datasheet PDF文件第6页浏览型号SM74611KTTR的Datasheet PDF文件第7页 
SM74611  
www.ti.com  
SNVS903 –DECEMBER 2012  
SM74611 Smart Bypass Diode  
Check for Samples: SM74611  
1
FEATURES  
2
•
•
•
•
•
•
Maximum reverse voltage (VR) of 30 V  
•
Operating range (Tj) of -40°C to 125°C  
Maximum forward current (IF) of 15A  
APPLICATIONS  
Low average forward voltage (26mV at 8A)  
Less power dissipation than Schottky diode  
Lower leakage current than Schottky diode  
•
•
Bypass Diodes for Photovoltaic Panels  
Bypass Diodes for Microinverter and Power  
Optimizer  
Footprint and pin compatible with  
conventional D2PAK Schottky diode  
DESCRIPTION  
The SM74611 is a smart bypass diode used in photovoltaic applications. It serves the purpose of providing an  
alternate path for string current when parts of the panel are shaded during normal operation. Without bypass  
diodes, the shaded cells will exhibit a hot spot which is caused by excessive power dissipation in the reverse  
biased cells. Currently, conventional P-N junction diodes or Schottky diodes are used to mitigate this issue.  
Unfortunately the forward voltage drop for these diodes is still considered high (~0.6V for normal diodes and 0.4V  
for Schottky). With 10A of currents flowing through these diodes, the power dissipation can reach as high as 6W.  
This in turn will raise the temperature inside the junction box where these diodes normally reside and reduce  
module reliability.  
The advantage of the SM74611 is that it has a lower forward voltage drop than P-N junction and Schottky  
diodes. It has a typical average forward voltage drop of 26mV at 8A of current. This translates into typical power  
dissipation of 208mW, which is significantly lower than the 3.2W of conventional Schottky diodes. The SM74611  
is also footprint and pin compatible with conventional D2PAK Schottky diodes, making it a drop-in replacement in  
many applications.  
TYPICAL APPLICATION CIRCUITS  
JUNCTION BOX  
K
K
A
K
A
A
SM74611  
SM74611  
SM74611  
PV MODULE  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2012, Texas Instruments Incorporated  
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SM74611KTTR 替代型号

型号 品牌 替代类型 描述 数据表
DPG60IM300PC IXYS

功能相似

 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 60A, 300V V(RRM), Silicon, TO-263AB, ROHS
SBR10U40CTB DIODES

功能相似

 Rectifier Diode, 1 Phase, 2 Element, 10A, 40V V(RRM), Silicon, TO-263AB, PLASTIC, TO-263,
DPG60C300PC IXYS

功能相似

 HiPerFRED High Performance Fast Recovery Diode low Loss Soft Recovery Common Cathode

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