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SM741SDX PDF预览

SM741SDX

更新时间: 2022-03-19 05:41:06
品牌 Logo 应用领域
德州仪器 - TI 驱动器栅极MOSFET栅极驱动
页数 文件大小 规格书
14页 314K
描述
Tiny 7A MOSFET Gate Driver

SM741SDX 数据手册

 浏览型号SM741SDX的Datasheet PDF文件第1页浏览型号SM741SDX的Datasheet PDF文件第3页浏览型号SM741SDX的Datasheet PDF文件第4页浏览型号SM741SDX的Datasheet PDF文件第5页浏览型号SM741SDX的Datasheet PDF文件第6页浏览型号SM741SDX的Datasheet PDF文件第7页 
July 18, 2011  
SM74101  
Tiny 7A MOSFET Gate Driver  
General Description  
Features  
The SM74101 MOSFET gate driver provides high peak gate  
drive current in the tiny LLP-6 package (SOT23 equivalent  
footprint), with improved power dissipation required for high  
frequency operation. The compound output driver stage in-  
cludes MOS and bipolar transistors operating in parallel that  
together sink more than 7A peak from capacitive loads. Com-  
bining the unique characteristics of MOS and bipolar devices  
reduces drive current variation with voltage and temperature.  
Under-voltage lockout protection is provided to prevent dam-  
age to the MOSFET due to insufficient gate turn-on voltage.  
The SM74101 provides both inverting and non-inverting in-  
puts to satisfy requirements for inverting and non-inverting  
gate drive with a single device type.  
Renewable Energy Grade  
Compound CMOS and bipolar outputs reduce output  
current variation  
7A sink/3A source current  
Fast propagation times (25 ns typical)  
Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load)  
Inverting and non-inverting inputs provide either  
configuration with a single device  
Supply rail under-voltage lockout protection  
Dedicated input ground (IN_REF) for split supply or single  
supply operation  
Power Enhanced 6-pin LLP package (3.0mm x 3.0mm)  
Output swings from VCC to VEE which can be negative  
relative to input ground  
Block Diagram  
30159901  
Block Diagram of SM74101  
© 2011 National Semiconductor Corporation  
301599  
www.national.com  

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