5秒后页面跳转
SM6T7V5A PDF预览

SM6T7V5A

更新时间: 2024-09-13 22:20:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 188K
描述
TRANSILTM

SM6T7V5A 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:17 weeks风险等级:1.15
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:179914Samacsys Pin Count:2
Samacsys Part Category:TVS Diode (Uni-directional)Samacsys Package Category:Other
Samacsys Footprint Name:SMBSamacsys Released Date:2020-04-05 11:24:22
Is Samacsys:N其他特性:UL RECOGNIZED
最大击穿电压:7.88 V最小击穿电压:7.13 V
击穿电压标称值:7.5 V最大钳位电压:14.5 V
配置:SINGLE最小二极管电容:3700 pF
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:4000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:6.4 V最大反向电流:500 µA
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn) - annealed
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

SM6T7V5A 数据手册

 浏览型号SM6T7V5A的Datasheet PDF文件第2页浏览型号SM6T7V5A的Datasheet PDF文件第3页浏览型号SM6T7V5A的Datasheet PDF文件第4页浏览型号SM6T7V5A的Datasheet PDF文件第5页 
SM6T6V8A/220A  
®
SM6T6V8CA/220CA  
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 600 W (10/1000µs)  
BREAKDOWN VOLTAGE RANGE :  
From 6.8V to 220 V.  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
SMB  
(JEDEC D0-214AA)  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particu-  
larly suited to protect voltage sensitive devices  
such as MOS Technology and low voltage sup-  
plied IC’s.  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peak pulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
600  
5
Unit  
W
Tj initial = Tamb  
amb = 50°C  
P
T
W
IFSM  
Non repetitive surge peak forward  
current for unidirectional types  
tp = 10ms  
Tj initial = Tamb  
100  
A
Tstg  
Tj  
Storage temperature range  
Maximum junction temperature  
- 65 to + 175  
150  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10 s.  
260  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
20  
Unit  
°C/W  
°C/W  
Junction to leads  
Rth (j-a)  
Junction to ambient on printed circuit on recommended pad  
layout  
100  
August 2001- Ed: 5A  
1/5  

SM6T7V5A 替代型号

型号 品牌 替代类型 描述 数据表
P6SMB8.2AT3G ONSEMI

功能相似

600 Watt Peak Power Zener Transient Voltage Suppressors
P6SMB7.5AT3G ONSEMI

功能相似

600 Watt Peak Power Zener Transient Voltage Suppressors
SM6T7V5AY STMICROELECTRONICS

功能相似

Automotive 600 W Transil™

与SM6T7V5A相关器件

型号 品牌 获取价格 描述 数据表
SM6T7V5A/51 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 6.4V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM6T7V5A/51-E3 VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T7V5A/52 VISHAY

获取价格

Trans Voltage Suppressor Diode, 600W, 6.4V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM6T7V5A/5B-E3 VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T7V5A-E3 VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T7V5A-E3/2 VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMC, 2 PIN, Transient
SM6T7V5A-E3/52 VISHAY

获取价格

TVS DIODE 6.4V 11.3V DO214AA
SM6T7V5A-E3/5B VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
SM6T7V5A-HE3/52 VISHAY

获取价格

DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
SM6T7V5AHE3/5B VISHAY

获取价格

TVS DIODE 6.4V 11.3V DO214AA