SM6T6V8A

更新时间： 2024-11-04 22:20:23

品牌	Logo	应用领域
威世 - VISHAY		瞬态抑制器二极管光电二极管局域网
页数	文件大小	规格书
3页	59K
描述
TRANSZORB⑩ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

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中文翻译

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SM6T6V8A 数据手册

NEW PRODUCT

SM6T SERIES

TRANSZORB™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Breakdown Voltage - 6.8 to 220 Volts Peak Pulse Power - 600 Watts

FEATURES

♦ For surface mounted applications in order

DO-214AA

to optimize board space

♦ Low profile package

♦ Built-in strain relief

♦ Glass passivated junction

♦ Low inductance

0.086 (2.20)

0.077 (1.95)

0.155 (3.94)

0.130 (3.30)

♦ Excellent clamping capability

♦ Repetition Rate (duty cycle): 0.01%

♦ Fast reponse time: typically less than 1ps from 0 volts to

0.180 (4.57)

0.160 (4.06)

min.

♦ Typical I less than 1µA above 10V

0.012 (0.305)

0.006 (0.152)

♦ High temperature soldering: 250°C/10 seconds

at terminals

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

0.096 (2.44)

0.084 (2.13)

MECHANICAL DATA

Case: JEDEC DO-214AA (SMB) molded plastic over

passivated junction

Terminals: Solder plated solderable per MIL-STD-750,

Method 2026

0.008 (0.203)

MAX.

0.060 (1.52)

0.030 (0.76)

0.220 (5.59)

0.205 (5.21)

Polarity: For uni-directional types: Color band

denotes positive end (cathode)

Dimensions in inches and (millimeters)

Standard Packaging: 12mm tape (EIA STD RS-481)

Weight: 0.003 ounces, 0.093 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified

SYMBOLS

VALUE

UNIT

Peak Pulse Power Dissipation on 10/1000µs

waveform _{(NOTES 1, 2, Fig. 1)}

P_PPM

Minimum 600

Watts

Peak Pulse Current on 10/1000µs

waveform _{(NOTE 1, Fig. 3)}

I_PPM

P_M(AV)

I_FSM

See Table 1

5.0

Amps

Watts

Amps

Power Dissipation on Infinite Heatsink, T_A=50°C

Peak Forward Surge Current, 10ms Single Half Sine-wave,

Undirectional Only

100

Max. Junction Temperature

T_J

150

-65 to +175

100

°C

Storage Temperature Range

T_STG

R_ΘJA

R_ΘJL

Thermal Resistance Junction to Ambient Air _{(NOTE 2)}

Thermal Resistance Junction to Leads

°C/W

NOTES

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A=25°C per Fig. 2

(2) Mounted on 5.0mm²(.013mm thick) land areas.

(3) Measured on 8.3ms single half sine-wave or equivalent squarewave, duty cycle 4 pulses per minute maximum.

1/21/99

12 3

中文翻译

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与SM6T6V8A相关器件

型号	品牌	获取价格	描述	数据表
SM6T6V8A/2	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM6T6V8A/220	STMICROELECTRONICS	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE
SM6T6V8A/2-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMC, 2 PIN, Transient
SM6T6V8A/5	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM6T6V8A/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5.8V V(RWM), Unidirectional,
SM6T6V8A/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5.8V V(RWM), Unidirectional,
SM6T6V8A/52-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T6V8A/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5.8V V(RWM), Unidirectional,
SM6T6V8A/5B-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T6V8A/5-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMC, 2 PIN, Transient

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