Datasheet > SM6T33A

SM6T33A

更新时间： 2024-11-28 06:12:07

品牌	Logo	应用领域
MDE		二极管光电二极管局域网
页数	文件大小	规格书
3页	82K
描述
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SM6T33A 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414

1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com

SM6T SERIES

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-5.0 TO 220 Volts

600 Watt Peak Pulse Power

FEATURES

• For surface mounted applications in order to

optimize board space

• Low profile package

• Built-in strain relief

• Glass passivated junction

• Low inductance

• Excellent clamping capability

• Repetition rate (duty cycle):0.01%

• Fast response time: typically less than

1.0 ps from 0 volts to BV for unidirectional types

• Typical IR less than 1µA above 10V

• High temperature soldering:

250°C/10 seconds at terminals

• Plastic package has Underwriters Laboratory

Flammability Classification 94 V-O

MECHANICAL DATA

Case: JEDEC DO214AA. Molded plastic over glass

passivated junction

Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026

Dimensions in inches (millimeters)

Polarity: Color band denoted positive end (cathode)

except Bidirectional

Standard Packaging: 12mm tape (EIA STD RS-481)

Weight: 0.003 ounces, 0.093 grams)

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use CA Suffix for types SM6T6V8CA thru types SM6T220CA

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

VALUE

Minimum 600

SEE TABLE 1

100

UNITS

Watts

Amps

Peak Pulse Power Dissipation on 10/1000 µs

waveform (NOTE 1, 2, Fig.1)

P_PPM

I_PPM

I_FSM

Peak Pulse Current of on 10/1000 µs waveform (Note 1,Fig 3)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load, (JEDEC Method)(Note2, 3)

Operatings and Storage Temperature Range

NOTES:

T_J, T_STG

-55 +150

°C

1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2. Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

Certified RoHS Compliant

UL File # E223026

12 3

中文翻译

下载PDF

与SM6T33A相关器件

型号	品牌	获取价格	描述	数据表
SM6T33A/2	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
SM6T33A/2-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMC, 2 PIN, Transient
SM6T33A/5	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 28.2V V(RWM), Unidirectional, 1 Element, Silicon, DO
SM6T33A/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 28.2V V(RWM), Unidirectional,
SM6T33A/51-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T33A/52	VISHAY	获取价格	Trans Voltage Suppressor Diode, 28.2V V(RWM), Unidirectional,
SM6T33A/52-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T33A/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 28.2V V(RWM), Unidirectional,
SM6T33A/5B-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T33A/5-E3	VISHAY	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMC, 2 PIN, Transient

与SM6T33A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

48
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

66
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

SM6T33A

SM6T33A 数据手册

与SM6T33A相关器件

与SM6T33A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SM6T33A

SM6T33A 数据手册

与SM6T33A相关器件

与SM6T33A相关文章

您还可以找

您在本页遇到什么问题？