SLG59M1709V
An Ultra-small, 4 mΩ, 4 A
IntegratedPowerSwitchwithMultipleProtectionFeatures
General Description
Pin Configuration
Operating from a 2.5 V to 5.5 V power supply and fully
specified over the -40 °C to 85 °C temperature range, the
ON GND
SLG59M1709V is
a
high-performance
4
mΩ,
4
A
CAP
VDD
NC
1
14
13
single-channel nFET integrated power switch with adjustable
inrush current control which is achieved by adjusting the VOUT
slew rate with an external capacitor. Using a proprietary
MOSFET design, the SLG59M1709V achieves a stable 4 mΩ
16 15
2
NC
12
VOUT
VOUT
VOUT
VOUT
3
VIN
VIN
VIN
VIN
RDSON across
a
wide input/supply voltage range.
4
5
6
11
10
9
Incorporating two-stage current protection as well as thermal
protection, the SLG59M1709V is designed for all 0.8 V to 5.5V
power rail applications. Using Silego’s proprietary CuFET™
technology for high-current operation, the SLG59M1709V is
7
8
packaged in
a space-efficient, low thermal resistance,
VIN VOUT
RoHS-compliant 1.6 mm x 2.5 mm STQFN package
16-pin FC-STQFN
Features
(Top View)
•
•
•
•
•
•
Low Typical RDSON nFET: 4 mΩ
Maximum Continuous Switch Current: Up to 4 A
Supply Voltage: 2.5 V ≤ VDD ≤ 5.5 V
Wide Input Voltage Range: 0.8 V ≤ VIN ≤ VDD
Capacitor-adjustable Start-up and Inrush Current Control
Two-stage Overcurrent Protection:
Applications
•
•
•
Notebook Power Rail Switching
Tablet Power Rail Switching
Smartphone Power Rail Switching
•
•
Fixed threshold, 8 A Active Current Limit
Fixed 0.5 A Short-circuit Current Limit
•
•
Operating Temperature: -40 °C to 85 °C
Low θJA, 16-pin 1.6 mm x 2.5 mm STQFN Packaging
•
Pb-Free / Halogen-Free / RoHS compliant
Block Diagram
4 A @ 4 mꢀ
VOUT
VIN
CIN
CLOAD
+2.5 to 5.5 V
VDD
CAP
Charge
Pump
Linear Ramp
Control
CSLEW
4 nF
Over Current and
Over Temperature
Protection
SW Closed
SW Open
ON
CMOS Input
GND
Silego Technology, Inc.
000-0059M1709-100
Rev1.00
Revised January 30, 2017