Datasheet > SLG59M1730CTR

SLG59M1730CTR

更新时间： 2022-02-26 14:11:54

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DIALOG		/
页数	文件大小	规格书
18页	679K
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Integrated VOUT Discharge Resistor

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SLG59M1730CTR 数据手册

SLG59M1730C

An Ultra-small 33 mΩ, 1.0 A pFET

Integrated Power Switch with Controlled Inrush Current

General Description

Pin Configuration

Pin A1 Index Mark

Operating from a 2.5 V to 5.5 V power supply, the

SLG59M1730C is a self-powered, high-performance 33 mΩ,

1.0 A single-channel pFET integrated power switch with a

controlled V_INinrush current profile. The SLG59M1730C’s low

supply current and controlled V_INinrush current profile makes

it an ideal pFET integrated power switch in small form-factor

personal health monitor and watch applications.

GND

VIN

VOUT

Using a proprietary MOSFET design, the SLG59M1730C

achieves a low RDS_ONacross the entire input voltage range.

Through the application of Silego’s proprietary CuFET

technology, the SLG59M1730C’s can be used in applications

up to 1 A with a very-small 0.64 mm²WLCSP form factor.

4L WLCSP

(Laser Marking View)

Features

•

Integrated 1 A Continuous I_DSpFET Power Switch

Low Typical RDS_ON

• 33 mΩ at V_IN= 5.5 V

• 45.1 mΩ at V_IN= 3.3 V

• 56.1 mΩ at V_IN= 2.5 V

•

Input Voltage: 2.5 V to 5.5 V

Low Typical No-load Supply Current: 0.004 µA

Integrated VOUT Discharge Resistor

Operating Temperature: -40 °C to 85 °C

Low θ_JA, 4-pin 0.8 mm x 0.8 mm, 0.4 mm pitch 4L WLCSP

Packaging

• Pb-Free / Halogen-Free / RoHS compliant

Block Diagram

1.0 A

VIN

VOUT

C_IN

30 µF

C_LOAD

30 µF

In-rush

Current

Limiting

OFF

Silego Technology, Inc.

000-0059M1730-104

Rev1.04

Revised October 24, 2017

12 3 4 5 6 7...18

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