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SLE24C16-S PDF预览

SLE24C16-S

更新时间: 2024-01-10 16:59:52
品牌 Logo 应用领域
英飞凌 - INFINEON 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
22页 310K
描述
8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus

SLE24C16-S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:PLASTIC, DSO-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.49
Is Samacsys:N最大时钟频率 (fCLK):0.1 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
I2C控制字节:1010MMMRJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.93 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:I2C
最大待机电流:0.00005 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.94 mm最长写入周期时间 (tWC):8 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

SLE24C16-S 数据手册

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SLx 24C08/16  
Pin Definitions and Functions  
Table 1  
Pin No.  
Symbol  
N. C.  
VSS  
Function  
1, 2, 3  
Not connected  
Ground  
4
5
6
7
8
SDA  
SCL  
WP  
Serial bidirectional data bus  
Serial clock input  
Write protection input  
Supply voltage  
VCC  
Pin Description  
Serial Clock (SCL)  
The SCL input is used to clock data into the device on the rising edge and to clock data  
out of the device on the falling edge.  
Serial Data (SDA)  
SDA is a bidirectional pin used to transfer addresses, data or control information into the  
device or to transfer data out of the device. The output is open drain, performing a wired  
AND function with any number of other open drain or open collector devices. The SDA  
bus requires a pull-up resistor to VCC.  
Write Protection (WP)  
WP switched to VSS allows normal read/write operations.  
WP switched to VCC protects the entire EEPROM against changes (hardware write  
protection).  
Semiconductor Group  
5
1998-07-27  

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