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SLD302V-3 PDF预览

SLD302V-3

更新时间: 2024-11-17 22:06:19
品牌 Logo 应用领域
索尼 - SONY 二极管激光二极管
页数 文件大小 规格书
7页 68K
描述
200mW High Power Laser Diode

SLD302V-3 技术参数

生命周期:Active包装说明:M-248 (LO-11), 3 PIN
Reach Compliance Code:unknown风险等级:5.56
配置:SINGLE WITH BUILT-IN PHOTO DIODE安装特点:THROUGH HOLE MOUNT
功能数量:1最高工作温度:50 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:180 mW峰值波长:830 nm
半导体材料:GaAlAs形状:ROUND
尺寸:3.5 mm光谱带宽:1e-8 m
子类别:Laser Diodes表面贴装:NO
最大阈值电流:200 mABase Number Matches:1

SLD302V-3 数据手册

 浏览型号SLD302V-3的Datasheet PDF文件第2页浏览型号SLD302V-3的Datasheet PDF文件第3页浏览型号SLD302V-3的Datasheet PDF文件第4页浏览型号SLD302V-3的Datasheet PDF文件第5页浏览型号SLD302V-3的Datasheet PDF文件第6页浏览型号SLD302V-3的Datasheet PDF文件第7页 
SLD302V  
200mW High Power Laser Diode  
Description  
The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD.  
MOCVD: Metal Organic Chemical Vapor Deposition  
Features  
High power  
Recommended power output Po = 180mW  
Low operating current  
Applications  
Solid state laser excitation  
Medical use  
Structure  
GaAlAs double-hetero-type laser diode  
Absolute Maximum Ratings (Tc = 25°C)  
Optical power output  
Reverse voltage  
Po  
200  
2
mW  
V
VR LD  
PD  
15  
V
Operating temperature  
Storage temperature  
Topr  
Tstg  
–10 to +50  
–40 to +85  
°C  
°C  
Pin Configuration  
2
1
3
1. LD cathode  
2. PD anode  
3. COMMON  
Bottom View  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E88060B81-PS  

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