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SKY77706 PDF预览

SKY77706

更新时间: 2024-11-25 06:11:55
品牌 Logo 应用领域
思佳讯 - SKYWORKS 电信集成电路蜂窝电话电路电信电路放大器功率放大器LTE
页数 文件大小 规格书
2页 70K
描述
Power Amplifier Module for LTE FDD Band VII (2500-2570 MHz)

SKY77706 技术参数

生命周期:Active零件包装代码:MODULE
包装说明:,针数:10
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.77Is Samacsys:N
JESD-30 代码:R-XXMA-X10功能数量:1
端子数量:10封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
表面贴装:NO电信集成电路类型:RF AND BASEBAND CIRCUIT
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
Base Number Matches:1

SKY77706 数据手册

 浏览型号SKY77706的Datasheet PDF文件第2页 
PRODUCT SUMMARY  
SKY77706 Power Amplifier Module for LTE FDD Band VII  
(2500–2570 MHz)  
Applications  
Description  
FDD Evolved Universal  
Terrestrial Radio Access  
Networks (EUTRAN)  
The SKY77706 Power Amplifier Module (PAM) is a fully matched, surface mount module developed for  
LTE / EUTRAN applications. This small and efficient module packs full coverage of LTE FDD Band VII  
into a single compact package. The SKY77706 meets the stringent spectral linearity requirements of  
LTE modulation with QPSK / 16QAM modulations from 1.4 MHz to 20 MHz bandwidth and full or  
partial resource block allocations with high power added efficiency.  
Handsets and Data Cards  
Features  
QPSK, 16QAM modulations  
1.4 MHz to 20 MHz  
bandwidth  
Up to 100 resource blocks  
Band VII linear power  
@ 3.4 V  
The single Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all active  
circuitry in the module, including the PA, input, and interstage matching. Output match is realized off-  
chip within the module package to optimize efficiency and power performance into a 50 Ω load. The  
SKY77706 is manufactured with Skyworks’ BiFET process which provides for all positive voltage DC  
supply operation while maintaining high efficiency and good linearity. Primary bias is supplied via the  
VCC1 and VCC2 pads directly from battery output in the 3.2 to 4.2 volt range. Power-down is  
accomplished by setting a logic low level on the VEN pad. No external supply side switch is needed as  
typical “off” leakage is a few microamperes with full primary voltage supplied from the battery. The  
VMODE0 and VMODE1 pads are used to switch between high, medium and low power modes to  
reduce current consumption and gain in the back-off conditions.  
- LTE 28 dBm  
Low voltage positive bias  
supply 3.2 V to 4.2 V  
Excellent linearity and  
efficiency  
Large dynamic range  
Small, low profile package  
- 3 mm x 3 mm x 0.9 mm  
- 10-pad configuration  
InGaP BiFET Technology  
Figure 1. SKY77706 Functional Block Diagram  
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com  
201225A • Skyworks Proprietary and Confidential Information. • Products and product information are subject to change without notice. • January 25, 2010  
1

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