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SKUT85/12TV2 PDF预览

SKUT85/12TV2

更新时间: 2024-12-01 21:17:55
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 三端双向交流开关栅极
页数 文件大小 规格书
3页 175K
描述
Silicon Controlled Rectifier, 94000mA I(T), 1200V V(RRM), 3 Element

SKUT85/12TV2 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75最大直流栅极触发电流:150 mA
最大直流栅极触发电压:3 V快速连接描述:0
螺丝端子的描述:0最大维持电流:200 mA
最大漏电流:20 mA通态非重复峰值电流:1050 A
元件数量:3最大通态电流:94000 A
最高工作温度:125 °C最低工作温度:-40 °C
峰值回流温度(摄氏度):NOT SPECIFIED重复峰值反向电压:1200 V
子类别:TRIACs处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

SKUT85/12TV2 数据手册

 浏览型号SKUT85/12TV2的Datasheet PDF文件第2页浏览型号SKUT85/12TV2的Datasheet PDF文件第3页 
SKUT 85/12 T V2  
Absolute Maximum Ratings  
Symbol Conditions  
Chip  
Values  
Unit  
Ts = 25 °C  
Ts = 85 °C  
Tj = 25 °C  
Tj = 130 °C  
Tj = 25 °C  
Tj = 130 °C  
IT(AV)  
94  
50  
A
A
A
sinus 180°  
ITSM  
1150  
1050  
6613  
5000  
1300  
1200  
1200  
50  
10 ms  
A
i2t  
A²s  
A²s  
V
V
V
A/µs  
V/µs  
°C  
10 ms  
SEMIPONT® 5  
VRSM  
VRRM  
VDRM  
(di/dt)cr  
(dv/dt)cr  
Tj  
Three phase antiparallel  
thyristor module  
Tj = 130 °C  
Tj = 130 °C  
500  
-40 ... 125  
Module  
Tstg  
Visol  
SKUT 85/12 T V2  
Features  
-40 ... 125  
3000  
3600  
°C  
V
V
1 min  
1 s  
ac; 50Hz; r.m.s  
• Compact design  
Characteristics  
• Two screws mounting  
• Heat ransfer and isolation through  
direct copper board (Low Rth)  
• Low resistance in steady-state and  
high reliability  
Symbol Conditions  
Chip  
min.  
typ.  
max.  
Unit  
Tj = 25 °C, IT = 120 A  
VT  
1.8  
1.1  
6.00  
20  
V
V
m  
mA  
µs  
• High surge currents  
Tj = 130 °C  
Tj = 130 °C  
Tj = 130 °C, VRD=VRRM  
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs  
VD = 0.67 * VDRM  
Tj = 130 °C  
VT(TO)  
rT  
IDD;IRD  
tgd  
tgr  
tq  
• Glass passivated thyrsitor chips  
• UL recognized, file no. E 63 532  
• Integrated temperature sensor  
1
2
150  
µs  
µs  
Typical Applications*  
• Soft starter  
• Light control (e.g. studios, theaters)  
• Temperature control (e.g. oven,  
chemical processes)  
Tj = 25 °C  
IH  
200  
400  
mA  
mA  
V
mA  
V
mA  
K/W  
K/W  
K/W  
K/W  
K/W  
K/W  
Tj = 25 °C, RG = 33   
Tj = 25 °C, d.c.  
Tj = 25 °C, d.c.  
IL  
VGT  
IGT  
3
150  
Remarks  
• IRMS=85A , for W3C application,  
sin.180° and TS=85°C  
Tj = 130 °C, d.c.  
Tj = 115 °C, d.c.  
VGD  
IGD  
0.25  
0.43  
6
per thyristor  
per module  
per thyristor  
per module  
per thyristor  
per module  
Rth(j-s)  
Rth(j-s)  
Rth(j-s)  
Rth(j-s)  
Rth(j-s)  
Rth(j-s)  
continuous DC  
sin. 180°  
rec. 120°  
Module  
Rth(c-s)  
K/W  
K/W  
Nm  
Nm  
m/s²  
g
Ms  
Mt  
a
to heatsink  
2.25  
2.5  
w
75  
Temperature Sensor  
Tr = 100 °C, tolerance = 3 %  
R100  
1670  
R(T)=1000[1+A(T-25°C)+B(T-25°C)2  
], A = 7.635*10-3 °C-1,  
3550 ±  
2%  
B100/125  
K
B = 1.731*10-5 °C-2  
UT-T  
© by SEMIKRON  
Rev. 0 – 05.04.2013  
1

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