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SKR26/02UNF PDF预览

SKR26/02UNF

更新时间: 2024-02-24 23:46:32
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 二极管
页数 文件大小 规格书
4页 213K
描述
Rectifier Diode, 1 Phase, 1 Element, 25A, 200V V(RRM), Silicon, DO-203AA, HERMETIC SEALED, METAL, DO-4, 1 PIN

SKR26/02UNF 技术参数

生命周期:Obsolete零件包装代码:DO-4
包装说明:O-MUPM-D1针数:1
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
Is Samacsys:N其他特性:LEAKAGE CURRENT IS TYPICAL
应用:POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.55 V
JEDEC-95代码:DO-203AAJESD-30 代码:O-MUPM-D1
最大非重复峰值正向电流:375 A元件数量:1
相数:1端子数量:1
最高工作温度:180 °C最低工作温度:-40 °C
最大输出电流:25 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向电流:300 µA子类别:Rectifier Diodes
表面贴装:NO端子形式:SOLDER LUG
端子位置:UPPERBase Number Matches:1

SKR26/02UNF 数据手册

 浏览型号SKR26/02UNF的Datasheet PDF文件第2页浏览型号SKR26/02UNF的Datasheet PDF文件第3页浏览型号SKR26/02UNF的Datasheet PDF文件第4页 
VRSM  
VRRM  
IFRMS (maximum values for continuous operation)  
40 A  
Rectifier Diodes  
SKN 20  
SKNa 20  
SKN 26  
SKR 20  
SKR 26  
I
FAV (sin. 180; Tcase = 100 °C)  
25 A  
V
200  
400  
SKN 20/02  
SKN 20/04  
SKN 20/08  
SKN 20/12  
SKN 20/14  
SKN 20/16  
SKR 20/02  
SKR 20/04  
SKR 20/08  
SKR 20/12  
SKR 20/14  
SKR 20/16  
SKN 26/02  
SKN 26/04  
SKN 26/08  
SKN 26/12  
SKN 26/14  
SKN 26/16  
SKR 26/02*  
SKR 26/04*  
SKR 26/08*  
SKR 26/12*  
SKR 26/14*  
SKR 26/16*  
800  
1200  
1400  
1600  
Avalanche Types  
V(BR)min  
V
IFAV = 25 A  
(Tcase = 73 °C)  
1300  
1700  
SKNa 20/13  
SKNa 20/17  
Symbol Conditions  
SKN 20  
SKR 20  
SKNa 20  
SKN 26  
SKR 26  
IFAV  
sin. 180; Tcase = 93 °C  
= 100 °C  
25 A  
20 A  
20 A  
18 A  
11 A  
25 A  
20 A  
= 125 °C  
Features  
IFSM  
Tvj = 25 °C; 10 ms  
375 A  
320 A  
Reverse voltages up to 1600 V,  
Avalanche Types to 1700 V  
Hermetic metal cases with  
glass insulators  
Threaded studs ISO M6  
(SKR 26 also 10 – 32 UNF)  
SKN: anode to stud  
Tvj = Tvjmax  
Tvj = 25 °C; 8,3 ... 10 ms  
Tvj = Tvjmax 8,3 ... 10 ms  
;
10 ms  
i2t  
700 A2s  
510 A2s  
6 kW  
;
PRSM  
Tvj > 250 °C, tp = 10 µs  
diF  
dt  
A
µs  
Qrr  
IR  
Tvj = 160 °C; –  
= 10  
typ. 20 µC  
SKR: cathode to stud  
Tvj = 25 °C; VR = VRRM  
VR = V(BR)min  
0,3 mA  
4 mA  
10 µA  
0,3 mA  
4 mA  
Typical Applications  
All-purpose mean power  
rectifier diodes  
Tvj = 180 °C; VR = VRRM  
VF  
Tvj = 25 °C;  
Cooling via metal plates or  
heatsinks  
Non-controllable and  
half-controllable rectifiers  
Free-wheeling diodes  
Avalanche Types  
DC supply for magnets or  
solenoids (brakes, valves, etc.)  
Field coil supply for DC motors  
Series connections for high  
voltage applications  
IF = 60 A; max.  
Tvj = Tvjmax  
Tvj = Tvjmax  
1,55 V  
0,85 V  
11 mΩ  
V(TO)  
rT  
Rthjc  
Rthch  
Tvjmin  
Tvjmax  
2 °C/W  
1 °C/W  
– 40 °C  
150 °C  
180 °C  
180 °C  
Tstg  
– 55 ... + 180 °C  
M
a
w
SI units/US units  
approx.  
2,0 Nm/18 lb. in.  
5 9,81 m/s  
10 g  
2
.
8 g  
E 8  
RC  
Rp  
PR = 1 W  
PR = 4 W  
0,05 µF + 200 Ω  
150 kΩ  
* available with UNF thread  
10 – 32 UNF 2 A; e.g.  
SKR 26/02 UNF  
Case  
E 9  
© by SEMIKRON  
B 8 – 13  

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