Datasheet > SKR262/28

SKR262/28

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
3页	542K
描述
Rectifier Diode,

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中文翻译

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数据手册

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SKR262/28 数据手册

SKN 262, SKR 262

I_FRMS= 500 A (maximum value for continuous operation)

I_FAV= 260 A (sin. 180; T_c= 119 ºC)

V_RSM

V_RRM

2000

2200

2400

2800

2000

2200

2400

2800

SKN 262/20

SKN 262/22

SKN 262/24

SKN 262/28

SKR 262/20

SKR 262/22

SKR 262/24

SKR 262/28

Symbol

Condition

Values

Units

Stud Diode

I_FAV

I_D

sin. 180 ; T_C= 100 (125) ºC

K 0,55; T_a= 45 ºC; B2 / B6

K 0,55F; T_a= 35 ºC; B2 / B6

320 (240)

340 / 480

620 / 840

Rectifier Diode

I_FSM

i²t

T_vj= 25º C ; 10 ms

6000

5000

180000

125000

A²s

SKN 262

SKR 262

T_vj= 180º C ; 10 ms

T_vj= 25º C ; 8,3...10 ms

T_vj= 180º C ; 8,3...10 ms

V_F

V_(TO)

r_T

I_RD

Q_rr

T_vj= 25º C, I_F= 750 A

T_vj= 180º C

T_vj= 180º C ; V_R= V_RRM

T_vj= 160°C, -di_F/dt = 10 A/µs

max. 1,4

max. 0,85

max. 0,6

max. 60

typ. 200

m

µC

Features

 Reverse voltages up to 2800 V

 Hermetic metal case with

ceramic insulator with extra-long

creepage distances

 Threaded stud M16 x 1,5 mm

 Also available with threaded

studs M20 x 1,5 mm (e.g.

SKN 262/22 M20 and

K/W

°C

R_th(j-c)

R_th(c-s)

T_vj

0,2

0,03

-40...+180

-55...+180

T_stg

°C

3/4”16 UNF 2A (e.g.

SKR 262/24 UNF)

 SKN: anode to stud

 SKR: cathode to stud

V_isol

M_s

270

lb.in.

to heatsink ( SI units )

to heatsink ( US units )

5 * 9,81

260

m/s²

approx.

Typical Applications *

 High voltage rectifier diode,

especially for traction

applications

Case

 Cooling via heatsinks

 Non-controllable and half-

controllable rectifiers

 Free-wheeling diodes

 Recommended snubber

network:

RC: 1,0 µF, 20  (PR = 2W),

Rp: 25 K (PR = 20 W)

SKN

SKR

16-01-2019

12 3

中文翻译

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