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SKKT42/22E PDF预览

SKKT42/22E

更新时间: 2024-12-01 15:51:23
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页数 文件大小 规格书
4页 170K
描述
Silicon Controlled Rectifier, 62.8A I(T)RMS, 40000mA I(T), 2200V V(DRM), 2200V V(RRM), 2 Element, SEMIPACK-5

SKKT42/22E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X7
针数:5Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.84
其他特性:HIGH RELIABILITY, UL RECOGNIZED外壳连接:ISOLATED
配置:SERIES CONNECTED, 2 ELEMENTS关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:150 mA最大直流栅极触发电压:3 V
快速连接描述:2G-2GR螺丝端子的描述:A-K-AK
最大维持电流:250 mAJESD-30 代码:R-XUFM-X7
JESD-609代码:e2最大漏电流:15 mA
通态非重复峰值电流:1000 A元件数量:2
端子数量:7最大通态电流:40000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:62.8 A
断态重复峰值电压:2200 V重复峰值反向电压:2200 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Tin/Silver (Sn/Ag)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

SKKT42/22E 数据手册

 浏览型号SKKT42/22E的Datasheet PDF文件第2页浏览型号SKKT42/22E的Datasheet PDF文件第3页浏览型号SKKT42/22E的Datasheet PDF文件第4页 
SEMIPACK®  
Thyristor/ Diode Modules  
1
V
V
(dv/  
I
(maximum value for continuous operation)  
75 A  
RSM RRM  
TRMS  
V
dt)  
cr  
DRM  
I
(sin. 180; T = 68 °C)  
case  
TAV  
SKKT 41  
SKKT 42  
SKKT 42B  
SKKH 41  
SKKH 42  
SKKL 422)  
V
V
V/µs  
48 A  
500  
700  
900  
400 500  
SKKH 41/04 D  
600 500 SKKT 41/06 D SKKT 42/06 D SKKH 41/06 D SKKH 42/06 D  
800 500 SKKT 41/08 D SKKT 42/08 D1) SKKH 41/08 D SKKH 42/08 D  
1300 1200 500 SKKT 41/12 D  
SKKH 41/12 D  
1300 1200 1000 SKKT 41/12 E SKKT 42/12 E1) SKKH 41/12 E SKKH 42/12 E  
1500 1400 1000 SKKT 41/14 E SKKT 42/14 E1) SKKH 41/14 E SKKH 42/14 E  
1700 1600 1000 SKKT 41/16 E SKKT 42/16 E1) SKKH 41/16 E SKKH 42/16 E  
1900 1800 1000 SKKT 41/18 E SKKT 42/18 E1) SKKH 41/18 E SKKH 42/18 E  
2100 2000 1000 SKKT 41/20 E SKKT 42/20 E1)  
2300 2200 1000 SKKT 41/22 E SKKT 42/22 E1)  
SKKT 41  
SKKH 41  
SKKT 42  
SKKT 42B  
SKKH 42  
Symbol Conditions  
ITAV  
ID  
sin. 180; Tcase = 74 °C  
case = 85 °C  
48 A  
40 A  
50 A/60 A  
85 A/110 A  
T
B2/B6  
Tamb  
Tamb  
=
=
=
45 °C; P 3/180  
35 °C; P 3/180 F  
35 °C; P 3/180 F  
IRMS  
ITSM  
W1/W3 Tamb  
Tvj  
vj = 125 °C; 10 ms  
Tvj 25 °C; 8,3 ... 10 ms  
vj = 125 °C; 8,3 ... 10 ms  
Tvj 25 °C; IG = 1 A; diG/dt = 1 A/µs  
VD = 0,67 VDRM  
110 A/3 x 85 A  
SKKT 41  
SKKT 42  
SKKH 41  
SKKH 42  
=
25 °C; 10 ms  
1 000 A  
850 A  
T
i2t  
=
5 000 A2s  
3 600 A2s  
T
tgd  
tgr  
=
1 µs  
2 µs  
.
SKKL 42  
(di/dt)cr Tvj = 125 °C  
150 A/µs  
tq  
IH  
IL  
Tvj = 125 °C  
typ. 80 µs  
typ. 150 mA; max. 250 mA  
typ. 300 mA; max. 600 mA  
Tvj  
Tvj  
=
=
25 °C;  
25 °C; RG = 33 Ω  
Features  
VT  
Tvj  
=
25 °C; IT = 200 A  
max. 1,95 V  
1 V  
Heat transfer through aluminium  
oxide ceramic isolated metal  
baseplate  
Hard soldered joints for high  
reliability  
VT(TO) Tvj = 125 °C  
rT Tvj = 125 °C  
IDD; IRD Tvj = 125 °C; VDD = VDRM; VRD = VRRM  
4,5 mΩ  
max. 15 mA 3)  
VGT  
IGT  
VGD  
IGD  
Tvj  
Tvj  
=
=
25 °C; d. c.  
25 °C; d. c.  
3 V  
UL recognized, file no. E 63 532  
150 mA  
0,25 V  
6 mA  
Typical Applications  
Tvj = 125 °C; d. c.  
Tvj = 125 °C; d. c.  
DC motor control (e. g. for  
machine tools)  
AC motor soft starters  
Temperature control (e. g. for  
ovens, chemical processes)  
Professional light dimming  
(studios, theaters)  
Rthjc  
cont.  
sin. 180  
rec.120  
0,65 °C/W / 0,33 °C/W  
0,69 °C/W / 0,35 °C/W  
0,73 °C/W / 0,37 °C/W  
0,2 °C/W / 0,1 °C/W  
– 40 ... +125 °C  
per thyristor/per module  
Rthch  
Tvj, Tstg  
Visol  
M1  
M2  
a
a. c. 50 Hz; r.m.s.; 1 s/1 min  
to heatsink  
to terminals  
3600 V / 3000 V  
5 Nm/44 lb. in. ± 15 %4)  
SI units / US units  
3 Nm/26 lb. in. ± 15 %  
2
.
5
9,81 m/s  
120 g  
1)  
Also available in SKKT 42 B  
configuration (case A 48).  
SKKL 42 available on request  
/20 E, /22 E max. 30 mA  
w
approx.  
2)  
3)  
4)  
Case  
page B 1 – 93  
SKKT 41: A  
SKKH 41: A  
SKKH 42: A 47  
5
6
SKKL 42: A 59  
SKKT 42: A 46  
SKKT 42B: A 48  
See the assembly instructions  
© by SEMIKRON  
0896  
B 1 – 43  

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