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SKKT161/12D PDF预览

SKKT161/12D

更新时间: 2024-11-29 17:42:23
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页数 文件大小 规格书
6页 315K
描述
Silicon Controlled Rectifier, 251.2A I(T)RMS, 160000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 Element, CERAMIC, CASE A13, SEMIPACK-7

SKKT161/12D 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-240包装说明:FLANGE MOUNT, R-XUFM-X5
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.72
外壳连接:ISOLATED标称电路换相断开时间:150 µs
配置:SERIES CONNECTED, 2 ELEMENTS关态电压最小值的临界上升速率:500 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
快速连接描述:2G-2GR螺丝端子的描述:A-K-AK
最大维持电流:400 mAJESD-30 代码:R-XUFM-X5
JESD-609代码:e2最大漏电流:50 mA
通态非重复峰值电流:5400 A元件数量:2
端子数量:5最大通态电流:160000 A
最高工作温度:130 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:251.2 A
重复峰值关态漏电流最大值:50000 µA断态重复峰值电压:1200 V
重复峰值反向电压:1200 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Tin/Silver (Sn/Ag)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

SKKT161/12D 数据手册

 浏览型号SKKT161/12D的Datasheet PDF文件第2页浏览型号SKKT161/12D的Datasheet PDF文件第3页浏览型号SKKT161/12D的Datasheet PDF文件第4页浏览型号SKKT161/12D的Datasheet PDF文件第5页浏览型号SKKT161/12D的Datasheet PDF文件第6页 
SEMIPACK®  
Thyristor/ Diode Modules  
3
VRSM VRRM (dv/  
ITRMS (maximum values for continuous operation)  
240 A 270 A 240 A 270 A  
TAV (sin. 180; Tcase = . . .)  
V/µs 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C)  
VDRM dt)cr  
I
V
V
SKKT 131  
SKKT 161  
SKKH 131  
SKKH 161  
SKKT  
SKKT  
161/08 D  
161/12 D  
161/12 E  
161/14 E  
161/16 E  
161/18 E  
SKKH  
131/08 D  
131/12 E  
131/14 E  
131/16 E  
131/18 E  
131/20 E  
131/22 E  
SKKH  
161/08 D  
161/12 D  
161/12 E  
161/14 E  
161/16 E  
161/18 E  
900 800 500 131/08 D  
1300 1200 500 131/12 D  
1300 1200 1000  
1500 1400 1000  
1700 1600 1000  
1900 1800 1000  
2100 2000 1000  
2300 2200 1000  
131/12 E  
131/14 E  
131/16 E  
131/18 E  
131/20 E  
131/22 E  
SKKT 131  
SKKH 131 SKKH 161  
SKKT 161  
Symbol Conditions  
ITAV sin. 180; Tcase  
Units  
=
81 °C  
85 °C  
150  
172  
160  
A
A
92 °C  
130  
ID  
B2/B6  
Tamb  
=
P 16/170 F  
P 16/200 F  
P 16/300 F  
295/375  
300/380  
– /390  
340/3x290  
385/3x312  
– /3x318  
325/410  
330/415  
– /425  
380/3x310  
385/3x337  
– /3x344  
A
A
A
A
A
A
IRMS  
W1/W3 35 °C; P 16/170 F  
P 16/200 F  
P 16/300 F  
SKKT  
SKKH  
ITSM  
Tvj  
vj = 130 °C; 10 ms  
Tvj 25 °C; 8,3 ... 10 ms  
vj = 130 °C; 8,3 ... 10 ms  
Tvj 25 °C; IG = 1 A;  
diG/dt = 1 A/µs  
VD = 0,67 VDRM  
(di/dt)cr Tvj = 130 °C  
=
25 °C; 10 ms  
4 700  
4 000  
110 000  
80 000  
5 400  
5 000  
145 000  
125 000  
A
A
T
i2t  
=
A2 s  
A2 s  
Features  
T
Heat transfer through aluminium  
tgd  
tgr  
=
nitride ceramic isolated metal  
baseplate  
Precious metal pressure  
contacts for high reliability  
UL recognized, file no. 63 532  
1
2
µs  
µs  
.
200  
A/µs  
µs  
mA  
A
tq  
IH  
IL  
Tvj = 130 °C  
typ. 50 . . . 150  
typ. 150; max. 400  
typ. 0,3; max. 1  
Tvj  
Tvj  
=
=
25 °C  
25 °C; RG = 33 Ω  
Typical Applications  
DC motor control (e. g. for  
machine tools)  
Temperature control (e. g. for  
ovens, chemical processes)  
Professional light dimming  
(studios, theaters)  
VT  
V(TO)  
rT  
Tvj  
=
25 °C; IT = 500 A  
max. 1,7  
1
1,4  
max. 1,55  
V
V
mΩ  
Tvj = 130 °C  
Tvj = 130 °C  
1
1,0  
IDD; IRD Tvj = 130 °C; VDD = VDRM  
VRD = VRRM  
max. 50  
max. 50  
mA  
VGT  
IGT  
VGD  
IGD  
Tvj  
Tvj  
=
=
25 °C; d. c.  
25 °C; d. c.  
3
V
mA  
V
150  
0,25  
10  
Tvj = 130 °C; d. c.  
Tvj = 130 °C; d. c.  
mA  
Rthjc  
cont.  
sin. 180  
rec. 120  
0,19/0,09  
0,20/0,10  
0,22/0,11  
°C/W  
°C/W  
°C/W  
per thyristor/  
per module  
Rthch  
Tvj, Tstg  
0,06/0,03  
– 40 . . . +130  
°C/W  
°C  
Visol  
M1  
M2  
a
w
a. c. 50 Hz; r.m.s.; 1 s/1 min  
3600/3000  
V
to heatsink  
to terminals  
SI (US) units  
SI (US) units  
5 (44 lb. in.) ± 15 %1)  
Nm  
Nm  
9 (80 lb. in.) ± 15 %2)  
5
9,81  
m/s2  
g
.
1)  
2)  
approx.  
820  
See the assembly instructions  
The screws must be lubricated  
Case  
page B 1 – 76  
SKKT: A 13  
SKKH: A 14  
© by SEMIKRON  
0896  
B 1 – 71  

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