Datasheet > SKHE 2000/900-1,2

SKHE 2000/900-1,2

更新时间： 2024-11-17 14:54:15

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
3页	259K
描述
Diode Discretes SKHE 1 (L30D24M3)

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数据手册

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SKHE 2000/900-1,2 数据手册

SKHE 2000/900-1,2

I_FRMS= 4 A (maximum value for continuous operation)

I_FAV= 1,5 A (sin. 180; T_oil= 75 °C)

V_(BR)

V_RRM

6000

4800

SKHE 2000/900-1,2

Symbol

Condition

sin. 180 ; T_amb= 45 °C

Values

Units

I_FAV

1,25

I_FSM

i²t

T_vj= 25 °C ; 10 ms

135

120

T_vj= 150 °C ; 10 ms

T_vj= 25 °C ; 8,3...10 ms

T_vj= 150 °C ; 8,3...10 ms

High Voltage Rectifier

A²s

Rectifier Diode

V_F

V_(TO)

r_T

I_RD

Q_rr

T_vj= 25 °C, I_F= 1,5 A

T_vj= 150 °C

max. 3,6

max. 3,2

max. 96

max. 1

m

µC

SKHE 2000/900-1,2

T_vj= 150 °C ; V_R= V_RRM

Features



Repetitive reverse voltage of

4800 V

Epoxy case with screw

terminals

Can be series connected for

higher voltage applications

High I_FSMand i²t ratings

Avalanche characteristics

For use in air or oil

K/W

°C

R_th(j-c)

R_th(j-a)

T_vj

-40...+150

T_stg

°C

V_isol

M_s

0,9

lb.in.

m/s²

maximum to terminals (SI units)

maximum to terminals (US units)



5 * 9,81

approx.

Case

SKHE 1

Typical Applications



High voltage power supplies

Measuring equipment

RF transmission power supply

Dust precipitators

Lasers

Note:

Recommended maximum AC

input voltage: V_VRMS= 2000 V

SKHE

2016-05-06 RP

12 3

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