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SK35GD12T7ETE1 PDF预览

SK35GD12T7ETE1

更新时间: 2023-12-06 20:00:46
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
8页 832K
描述
IGBT Modules SEMITOP E1 (63x34x12)

SK35GD12T7ETE1 数据手册

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SK35GD12T7ETE1  
Absolute Maximum Ratings  
Symbol Conditions  
Inverter - IGBT  
Values  
Unit  
Tj = 25 °C  
VCES  
IC  
1200  
41  
34  
50  
41  
35  
70  
-20 ... 20  
V
A
A
A
A
A
A
V
Ts = 70 °C  
Ts = 100 °C  
Ts = 70 °C  
Ts = 100 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
IC  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
SEMITOP®E1  
Sixpack Open Emitter  
SK35GD12T7ETE1  
Features*  
VCC = 800 V  
V
V
GE 15 V  
Tj = 175 °C  
tpsc  
7
µs  
°C  
CES 1200 V  
Tj  
-40 ... 175  
Inverse - Diode  
Tj = 25 °C  
VRRM  
IF  
1200  
33  
27  
39  
32  
70  
170  
-40 ... 175  
V
A
A
A
A
A
A
°C  
Ts = 70 °C  
Ts = 100 °C  
Ts = 70 °C  
Ts = 100 °C  
λpaste=0.8 W/(mK)  
Tj = 175 °C  
• Optimized design for superior thermal  
performance  
IF  
λpaste=2.5 W/(mK)  
Tj = 175 °C  
• Low inductive design  
IFRM  
IFSM  
Tj  
• Press-Fit contact technology  
• 1200V Generation 7 IGBT (T7)  
• Robust and soft switching CAL4F  
diode technology  
tp = 10 ms, sin 180°, Tj = 150 °C  
Module  
It(RMS)  
Tstg  
• Integrated NTC temperature sensor  
• UL recognized file no. E 63 532  
, Tterminal at PCB joint = 30 K, per pin  
module without TIM  
AC, sinusoidal, t = 1 min  
30  
-40 ... 125  
2500  
A
°C  
V
Typical Applications  
Visol  
• Motor drives  
• Servo drives  
• Air conditioning  
• Auxiliary Inverters  
• UPS  
Characteristics  
Symbol Conditions  
Inverter - IGBT  
min.  
typ.  
max.  
Unit  
Remarks  
• Recommended Tj,op = -40 ...+150 °C  
• Tj,op > 150 °C during overload (details  
on AN19-002)  
Tj = 25 °C  
Tj = 150 °C  
Tj = 175 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 175 °C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 175 °C  
VCE(sat)  
VCE0  
rCE  
1.60  
1.78  
1.82  
1.00  
0.80  
0.75  
17  
28  
31  
5.8  
1.75  
1.93  
1.97  
1.05  
0.85  
0.80  
20  
31  
33  
6.45  
1
V
V
V
V
V
IC = 35 A  
GE = 15 V  
V
chiplevel  
chiplevel  
V
mΩ  
mΩ  
mΩ  
V
mA  
nF  
nF  
nF  
nC  
Ω
VGE = 15 V  
chiplevel  
VGE(th)  
ICES  
Cies  
Coes  
Cres  
QG  
VGE = VCE, IC = 0.75 mA  
VGE = 0 V, VCE = 1200 V, Tj = 25 °C  
f = 1 MHz  
5.15  
6.60  
0.09  
0.02  
487  
0
VCE = 25 V  
f = 1 MHz  
f = 1 MHz  
V
GE = 0 V  
VGE = -15 V ... +15 V  
Tj = 25 °C  
RGint  
GD-ET  
© by SEMIKRON  
Rev. 2.0 – 22.07.2021  
1

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