SK35GD12T7ETE1
Absolute Maximum Ratings
Symbol Conditions
Inverter - IGBT
Values
Unit
Tj = 25 °C
VCES
IC
1200
41
34
50
41
35
70
-20 ... 20
V
A
A
A
A
A
A
V
Ts = 70 °C
Ts = 100 °C
Ts = 70 °C
Ts = 100 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
IC
λpaste=2.5 W/(mK)
Tj = 175 °C
ICnom
ICRM
VGES
SEMITOP®E1
Sixpack Open Emitter
SK35GD12T7ETE1
Features*
VCC = 800 V
V
V
GE ≤ 15 V
Tj = 175 °C
tpsc
7
µs
°C
CES ≤ 1200 V
Tj
-40 ... 175
Inverse - Diode
Tj = 25 °C
VRRM
IF
1200
33
27
39
32
70
170
-40 ... 175
V
A
A
A
A
A
A
°C
Ts = 70 °C
Ts = 100 °C
Ts = 70 °C
Ts = 100 °C
λpaste=0.8 W/(mK)
Tj = 175 °C
• Optimized design for superior thermal
performance
IF
λpaste=2.5 W/(mK)
Tj = 175 °C
• Low inductive design
IFRM
IFSM
Tj
• Press-Fit contact technology
• 1200V Generation 7 IGBT (T7)
• Robust and soft switching CAL4F
diode technology
tp = 10 ms, sin 180°, Tj = 150 °C
Module
It(RMS)
Tstg
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532
, ∆Tterminal at PCB joint = 30 K, per pin
module without TIM
AC, sinusoidal, t = 1 min
30
-40 ... 125
2500
A
°C
V
Typical Applications
Visol
• Motor drives
• Servo drives
• Air conditioning
• Auxiliary Inverters
• UPS
Characteristics
Symbol Conditions
Inverter - IGBT
min.
typ.
max.
Unit
Remarks
• Recommended Tj,op = -40 ...+150 °C
• Tj,op > 150 °C during overload (details
on AN19-002)
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
VCE(sat)
VCE0
rCE
1.60
1.78
1.82
1.00
0.80
0.75
17
28
31
5.8
1.75
1.93
1.97
1.05
0.85
0.80
20
31
33
6.45
1
V
V
V
V
V
IC = 35 A
GE = 15 V
V
chiplevel
chiplevel
V
mΩ
mΩ
mΩ
V
mA
nF
nF
nF
nC
Ω
VGE = 15 V
chiplevel
VGE(th)
ICES
Cies
Coes
Cres
QG
VGE = VCE, IC = 0.75 mA
VGE = 0 V, VCE = 1200 V, Tj = 25 °C
f = 1 MHz
5.15
6.60
0.09
0.02
487
0
VCE = 25 V
f = 1 MHz
f = 1 MHz
V
GE = 0 V
VGE = -15 V ... +15 V
Tj = 25 °C
RGint
GD-ET
© by SEMIKRON
Rev. 2.0 – 22.07.2021
1