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SK3020CD2_13 PDF预览

SK3020CD2_13

更新时间: 2024-02-25 08:13:56
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管
页数 文件大小 规格书
2页 132K
描述
Surface Mount Schottky Rectifier Diodes. Common Cathode

SK3020CD2_13 数据手册

 浏览型号SK3020CD2_13的Datasheet PDF文件第2页 
SK3020CD2 ... SK30100CD2  
SK3020CD2 ... SK30100CD2  
Surface Mount Schottky Rectifier Diodes– Common Cathode  
Schottky-Gleichrichterdioden für die Oberflächenmontage – Gemeinsame Kathode  
Version 2012-01-16  
1.2  
10.25±0.5  
Nominal Current  
Nennstrom  
30 A  
4.5±0.2  
4
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
20...100 V  
1
2
3
Plastic case  
Kunststoffgehäuse  
TO-263  
D2PAK  
1.3  
0.8  
5.08  
Weight approx. – Gewicht ca.  
1.6 g  
0.4  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1
2
3
4
Standard packaging in tubes  
Standard Lieferform in Stangen  
Green Molding  
Halogen-Free1  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung Stoßspitzensperrspannung  
Surge peak reverse voltage  
Forward Voltage  
Durchlass-Spannung  
VF [V] 2) 3)  
VRRM [V]  
VRSM [V]  
IF = 5 A  
< 0.49  
< 0.49  
< 0.49  
< 0.49  
< 0.63  
< 0.63  
< 0.77  
< 0.77  
IF = 15 A  
< 0.55  
< 0.55  
< 0.55  
< 0.55  
< 0.70  
< 0.70  
< 0.85  
< 0.85  
SK3020CD2  
SK3030CD2  
SK3040CD2  
SK3045CD2  
SK3050CD2  
SK3060CD2  
SK3080CD2  
SK30100CD2  
20  
30  
20  
30  
40  
40  
45  
45  
50  
50  
60  
60  
80  
80  
100  
100  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 100°C  
IFAV  
IFAV  
15 A 3)  
30 A 4)  
Repetitive peak forward current – Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
IFRM  
IFSM  
55 A 3)  
Peak forward surge current  
50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz  
Sinus-Halbwelle  
SK3020CD2...  
SK3060CD2  
280/320 A 3)  
SK3080CD2...  
SK30100CD2  
TA = 25°C  
TA = 25°C  
IFSM  
i2t  
240/270 A 3)  
Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms  
390 A2s 3)  
Junction temperature – Sperrschichttemperatur  
Tj  
Tj  
-50...+150°C  
≤ 200°C  
in DC forward mode – bei Gleichstrom-Durchlassbetrieb  
Storage temperature – Lagerungstemperatur  
TS  
-50...+175°C  
1
From 2H/2012 – Ab 2H/2012  
Tj = 25°C  
Per diode; data for SK3050CD2...SK3060CD2 preliminary − Pro Diode; Daten für SK3050CD2...SK3060CD2 vorläufig  
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)  
2
3
4
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 
 

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