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SK2020CD2_10 PDF预览

SK2020CD2_10

更新时间: 2024-09-24 09:24:51
品牌 Logo 应用领域
德欧泰克 - DIOTEC 整流二极管
页数 文件大小 规格书
2页 118K
描述
Surface Mount Schottky Rectifier Diodes - Common Cathode

SK2020CD2_10 数据手册

 浏览型号SK2020CD2_10的Datasheet PDF文件第2页 
SK2020CD2 ... SK20100CD2  
SK2020CD2 ... SK20100CD2  
Surface Mount Schottky Rectifier Diodes– Common Cathode  
Schottky-Gleichrichterdioden für die Oberflächenmontage – Gemeinsame Kathode  
Version 2010-09-22  
Nominal Current  
Nennstrom  
20 A  
1.2  
10.25±0.5  
4.5±0.2  
4
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
20...100 V  
Type  
Typ  
Plastic case  
Kunststoffgehäuse  
TO-263  
D2PAK  
1
2
3
1.3  
0.8  
Weight approx.  
Gewicht ca.  
1.6 g  
5.08  
0.4  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1
2
3
4
Standard packaging in tubes  
Standard Lieferform in Stangen  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung Stoßspitzensperrspannung  
Surge peak reverse voltage  
Forward Voltage  
Durchlass-Spannung  
VF [V] 1) 2)  
VRRM [V]  
VRSM [V]  
IF = 5 A  
< 0.51  
< 0.51  
< 0.51  
< 0.51  
< 0.63  
< 0.63  
< 0.77  
< 0.77  
IF = 10 A  
< 0.55  
< 0.55  
< 0.55  
< 0.55  
< 0.70  
< 0.70  
< 0.85  
< 0.85  
SK2020CD2  
SK2030CD2  
SK2040CD2  
SK2045CD2  
SK2050CD2  
SK2060CD2  
SK2080CD2  
SK20100CD2  
20  
30  
20  
30  
40  
40  
45  
45  
50  
50  
60  
60  
80  
80  
100  
100  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 100°C  
IFAV  
10 A 2)  
20 A 3)  
IFAV  
IFRM  
IFSM  
Repetitive peak forward current Periodischer – Spitzenstrom  
f > 15 Hz  
TA = 25°C  
30 A 2)  
Peak forward surge current  
SK2020CD2...  
SK2060CD2  
130/150 A 2)  
50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
SK2080CD2...  
SK20100CD2  
TA = 25°C  
TA = 25°C  
IFSM  
i2t  
110/125 A 2)  
80 A2s 2)  
Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
Tj  
Tj  
-50...+150°C  
≤ 200°C  
in DC forward mode – bei Gleichstrom-Durchlassbetrieb  
Storage temperature – Lagerungstemperatur  
TS  
-50...+175°C  
1
Tj = 25°C  
2
3
Per diode − Pro Diode  
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 

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