Datasheet > SK16P

SK16P

更新时间： 2023-01-03 08:45:12

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	82K
描述
DIODE 1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, HSMB, 2 PIN, Signal Diode

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中文翻译

获取价格

数据手册

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SK16P 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

SK12

THRU

SK110

Micro Commercial Components

Features

•

Schottky Barrier Rectifier

Guard Ring Protection

Low Forward Voltage

Reverse Energy Tested

High Current Capability

Extremely Low Thermal Resistance

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

1 Amp Schottky

Rectifier

20 to 100 Volts

DO-214AA

(HSMB) (Round Lead)

Maximum Ratings

•

Operating Temperature(Tj): -55°C to +125°C

Storage Temperature(Tstg): -55°C to +150°C

Maximum Thermal Resistance; 28°C/W Junction To Lead

Cathode Band

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

20V

Maximum

RMS

Voltage

Maximum

Blocking

Voltage

20V

30V

40V

50V

60V

80V

100V

SK12

SK13

SK14

SK15

SK16

SK18

SK110

SK12

SK13

SK14

SK15

SK16

SK18

SK110

14V

21V

28V

35V

42V

56V

70V

30V

40V

50V

60V

80V

100V

Electrical Characteristics @ 25°C Unless Otherwise Specified

DIMENSIONS

Average Forward

Current

I_F(AV)

1.0A

T_J= 90°C

INCHES

MIN

DIM

MAX

.116

.089

.008

.02

MAX

2.95

2.25

.20

NOTE

.078

.075

.002

-----

1.98

1.90

.05

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine

-----

.90

.51

Maximum

.035

.065

.205

.160

.130

.055

.091

.224

.180

.155

1.40

2.32

5.69

4.57

3.94

Instantaneous

Forward Voltage

1.65

5.21

4.06

3.30

SK12

SK13

SK14

V_F

.45V

.55V

.60V

.72V

.85V

I_FM= 1.0A;

T_a= 25°C*

SUGGESTED SOLDER

PAD LAYOUT

SK15-16

SK18-110

0.090"

Maximum DC Reverse

Current At Rated DC

Blocking Voltage

I_R

0.5mA

20mA

T_A= 25°C

T_A= 100°C

Typical Junction

Capacitance

SK12

0.085”

C_J

110pF

30pF

Measured at

1.0MHz, V_R=4.0V

SK13-SK110

0.070”

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

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Revision: 4

2006/07/30

12 3 4

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