5秒后页面跳转
SiS112LDN PDF预览

SiS112LDN

更新时间: 2024-11-22 14:55:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 186K
描述
N-Channel 100 V (D-S) MOSFET

SiS112LDN 数据手册

 浏览型号SiS112LDN的Datasheet PDF文件第2页浏览型号SiS112LDN的Datasheet PDF文件第3页浏览型号SiS112LDN的Datasheet PDF文件第4页浏览型号SiS112LDN的Datasheet PDF文件第5页浏览型号SiS112LDN的Datasheet PDF文件第6页浏览型号SiS112LDN的Datasheet PDF文件第7页 
SiS112LDN  
Vishay Siliconix  
www.vishay.com  
N-Channel 100 V (D-S) MOSFET  
FEATURES  
PowerPAK® 1212-8 Single  
• TrenchFET® Gen IV power MOSFET  
• Tuned for the lowest RDS - Qoss FOM  
• 100 % Rg and UIS tested  
D
D
7
8
D
6
D
5
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
1
S
2
S
3
S
4
G
1
APPLICATIONS  
• Primary side switch  
• DC/DC converter  
D
Top View  
Bottom View  
PRODUCT SUMMARY  
VDS (V)  
100  
0.119  
0.135  
2.7  
8.8  
Single  
• Motor drive switch  
G
R
R
DS(on) max. () at VGS = 10 V  
DS(on) max. () at VGS = 4.5 V  
• Boost converter  
• LED backlighting  
Qg typ. (nC)  
D (A)  
Configuration  
S
I
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK 1212-8  
SIS112LDN-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-source voltage  
Gate-source voltage  
SYMBOL  
LIMIT  
100  
UNIT  
VDS  
V
VGS  
20  
TC = 25 °C  
C = 70 °C  
8.8  
7.0  
3.5 b, c  
2.8 b, c  
10  
12 a  
2.6 b, c  
6
T
Continuous drain current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
Continuous source-drain diode current  
TA = 25 °C  
L = 0.1 mH  
TC = 25 °C  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
1.8  
19.8  
mJ  
W
T
C = 70 °C  
12.7  
Maximum power dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
3.2 b, c  
2.1 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d, e  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b, f  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
31  
5
39  
6.3  
°C/W  
Maximum junction-to-case (drain)  
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 81 °C/W  
S22-0754-Rev. B, 29-Aug-2022  
Document Number: 62079  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SiS112LDN相关器件

型号 品牌 获取价格 描述 数据表
SIS11T ADAM-TECH

获取价格

IC Socket, SIP11, 11 Contact(s), 2.54mm Term Pitch, Solder
SIS-11-TOF ADAM-TECH

获取价格

IC Socket, SIP11, 11 Contact(s), 2.54mm Term Pitch, Solder
SiS126DN VISHAY

获取价格

N-Channel 80 V (D-S) MOSFET
SiS128LDN VISHAY

获取价格

N-Channel 80 V (D-S) MOSFET
SIS12T ADAM-TECH

获取价格

IC Socket, SIP12, 12 Contact(s), 2.54mm Term Pitch, Solder
SIS-12-TOF ADAM-TECH

获取价格

IC Socket, SIP12, 12 Contact(s), 2.54mm Term Pitch, Solder
SIS12V2.1 ETC

获取价格

3A, 7A and 12A switching regulators
SIS12VA BEL

获取价格

DC-DC Regulated Power Supply Module, 1 Output, Hybrid
SIS12VB BEL

获取价格

DC-DC Regulated Power Supply Module, 1 Output, Hybrid
SIS12VD BEL

获取价格

DC-DC Regulated Power Supply Module, 1 Output, Hybrid