是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | TSSOP, TSSOP16,.25 | Reach Compliance Code: | unknown |
风险等级: | 5.72 | Is Samacsys: | N |
JESD-30 代码: | R-PDSO-G16 | 端子数量: | 16 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP16,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 认证状态: | Not Qualified |
子类别: | Power Management Circuits | 表面贴装: | YES |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 0.635 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI9731DQ-T1 | VISHAY |
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Power Management Circuit | |
SI9750 | VISHAY |
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In-Rush Current Limit MOSFET Driver | |
SI9750_05 | VISHAY |
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In-Rush Current Limit MOSFET Driver | |
SI9750CY | VISHAY |
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In-Rush Current Limit MOSFET Driver | |
SI9750CY-T1 | VISHAY |
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In-Rush Current Limit MOSFET Driver | |
SI9750CY-T1-E3 | VISHAY |
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In-Rush Current Limit MOSFET Driver | |
SI9801DY | VISHAY |
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N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge | |
SI9801DY-E3 | VISHAY |
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Transistor | |
SI9802DY | VISHAY |
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Dual N-Channel Reduced Qg, Fast Switching MOSFET | |
SI9802DY-E3 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |