Datasheet > SI6969DQ-T1-GE3

SI6969DQ-T1-GE3

更新时间： 2024-02-08 11:55:19

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威世 - VISHAY		/
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描述
MOSFET 2P-CH 12V 8TSSOP

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SI6969DQ-T1-GE3 数据手册

Si6969DQ

Vishay Siliconix

Dual P-Channel 1.8-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

TrenchFET^®Power MOSFETs: 1.8 V Rated

V_DS(V)

R_DS(on)(Ω)

I_D(A)

4.6

•

0.034 at V_GS= - 4.5 V

0.050 at V_GS= - 2.5 V

0.075 at V_GS= - 1.8 V

RoHS

- 12

3.8

COMPLIANT

3.0

TSSOP-8

Si6969DQ

Top View

Ordering Information: Si6969DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 12

V_GS

T_A= 25 °C

T_A= 70 °C

4.6

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

3.8

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^{a, b}

- 1.25

1.1

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^{a, b}

P_D

0.72

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

110

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

R_thJA

°C/W

Steady State

115

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 10 s.

Document Number: 70828

S-81221-Rev. B, 02-Jun-08

www.vishay.com

12 3 4 5

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