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SI6973DQ-T1-GE3 PDF预览

SI6973DQ-T1-GE3

更新时间: 2024-01-01 20:27:05
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
5页 105K
描述
DUAL P-CH 1.8V (G-S) MOSFET - Tape and Reel

SI6973DQ-T1-GE3 技术参数

生命周期:Obsolete零件包装代码:TSSOP
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknown风险等级:5.82
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):4.1 A
最大漏极电流 (ID):4.1 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.14 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SI6973DQ-T1-GE3 数据手册

 浏览型号SI6973DQ-T1-GE3的Datasheet PDF文件第2页浏览型号SI6973DQ-T1-GE3的Datasheet PDF文件第3页浏览型号SI6973DQ-T1-GE3的Datasheet PDF文件第4页浏览型号SI6973DQ-T1-GE3的Datasheet PDF文件第5页 
Si6973DQ  
Vishay Siliconix  
Dual P-Channel 1.8-V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
TrenchFET® Power MOSFETs: 1.8 V Rated  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 4.8  
- 4.2  
- 3.5  
0.030 at VGS = - 4.5 V  
0.039 at VGS = - 2.5 V  
0.055 at VGS = - 1.8 V  
RoHS  
- 20  
COMPLIANT  
S
1
S
2
TSSOP-8  
Si6973DQ  
G
1
G
2
D
1
S
1
S
1
G
1
D
1
2
3
4
8
7
6
5
2
2
2
S
S
G
2
Top View  
D
1
D
2
P-Channel MOSFET  
P-Channel MOSFET  
Ordering Information: Si6973DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
8
V
VGS  
TA = 25 °C  
TA = 70 °C  
- 4.8  
- 3.9  
- 4.1  
- 3.2  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current (10 µs Pulse Width)  
- 30  
Continuous Source Current (Diode Conduction)a  
- 1.0  
1.14  
0.73  
- 0.7  
0.83  
0.53  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
86  
Maximum  
110  
Unit  
t 10 s  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
124  
52  
150  
°C/W  
RthJF  
65  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 71190  
S-81221-Rev. B, 02-Jun-08  
www.vishay.com  
1

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