Si4706-D50
1. Electrical Specifications
Table 1. Recommended Operating Conditions*
Parameter
Analog Supply Voltage
Symbol
Test Condition
Min
2.7
1.62
10
Typ
—
Max
5.5
3.6
—
Unit
V
V
A
Digital and Interface Supply Voltage
Analog Power Supply Powerup Rise Time
Digital Power Supply Powerup Rise Time
Ambient Temperature
V
—
V
D
V
—
µs
µs
C
ARISE
DRISE
V
10
—
—
T
–20
25
85
A
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at VA = 3.3 V and 25 C unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. Absolute Maximum Ratings1,2
Parameter
Symbol
Value
–0.5 to 5.8
–0.5 to 3.9
10
Unit
V
Analog Supply Voltage
V
A
Digital and Interface Supply Voltage
V
V
D
3
Input Current
I
mA
V
IN
3
Input Voltage
V
T
–0.3 to (V + 0.3)
IN
IO
Operating Temperature
Storage Temperature
–40 to 95
–55 to 150
0.4
C
C
OP
T
STG
4
RF Input Level
V
pK
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
2. The Si4706 device is a high-performance RF integrated circuit with certain pins having an ESD rating of < 2 kV HBM.
Handling and assembly of these devices should only be done at ESD-protected workstations.
3. For input pins DFS, SCLK, SEN, SDIO, RST, RCLK, GPO1, GPO2, and GPO3.
4. At RF input pins FMI and LPI.
4
Rev. 1.0