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SI3442DV-T3 PDF预览

SI3442DV-T3

更新时间: 2024-02-25 00:38:13
品牌 Logo 应用领域
威世 - VISHAY 脉冲光电二极管晶体管
页数 文件大小 规格书
5页 85K
描述
Power Field-Effect Transistor, 4A I(D), 20V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SI3442DV-T3 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):4 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e0
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

SI3442DV-T3 数据手册

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Document Number: 91000  
Revision: 18-Jul-08  
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