Datasheet > SHD116222B

SHD116222B

更新时间： 2024-11-18 04:51:59

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SILICON SCHOTTKY RECTIFIER DIE Extremely Low Forward Voltage Drop

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SHD116222B 数据手册

SHD116222

SHD116222B

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 642, REV. A

Formerly part number SHD1162/A/B

SILICON SCHOTTKY RECTIFIER

Very Low Forward Voltage Drop

Features:

•

Soft Reverse Recovery at Low and High Temperature

Very Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Maximum Ratings

Characteristics

Symbol

V_RWM

I_F(AV)

Condition

50% duty cycle, rectangular

wave form

Max.

Units

Peak Inverse Voltage

Max. Average Forward

Current

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche

Energy

280

I_FSM

E_AS

I_AR

8.3 ms, half Sine wave

T_J= 25 °C, I_AS= 3.0 A,

L = 4.4 mH

_ASdecay linearly to 0 in 1 µs

Repetitive Avalanche Current

3.0

ƒ limited by T_Jmax V_A=1.5V_R

Maximum Thermal Resistance

(Junction to Mounting Surface,

Cathode)

.85

R_θJC

°C/W

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +175

°C

Electrical Characteristics

Characteristics

Max. Forward Voltage Drop

Symbol

V_F1

Condition

@ 15A, Pulse, T_J= 25 °C

@ 15A, Pulse, T_J= 125 °C

@V_R= 45V, Pulse,

T_J= 25 °C

Max.

0.64

0.57

400

Units

V_F2

I_R1

Max. Reverse Current

µA

I_R2

C_T

@V_R= 45V, Pulse,

T_J= 125 °C

Max. Junction Capacitance

800

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz,

V_SIG= 50mV (p-p)

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