Datasheet > SHD115136_06

SHD115136_06

更新时间： 2024-11-21 09:26:55

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描述
HERMETIC SCHOTTKY RECTIFIER Very Low Forward Voltage Drop

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SHD115136_06 数据手册

SHD115136

SHD115136B

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 4527, REV. B

HERMETIC SCHOTTKY RECTIFIER

Very Low Forward Voltage Drop

Features:

•

Soft Reverse Recovery at Low and High Temperature

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Capacity

Guard Ring for Enhanced Durability and Long Term Reliability

Guaranteed Reverse Avalanche Characteristics

Maximum Ratings

Characteristics

Peak Inverse Voltage

Max. Average Forward Current

Symbol

V_RWM

I_F(AV)

Condition

Max.

200

7.5

Units

50% duty cycle, rectangular

wave form (Single)

50% duty cycle, rectangular

wave form (Common Cathode)

8.3 ms, half Sine wave

(per leg)

T_J= 25 °C, I_AS= 3.0 A,

L = 4.4 mH (per leg)

_ASdecay linearly to 0 in 1 µs

Max. Average Forward Current

I_F(AV)

I_FSM

E_AS

I_AR

140

Max. Peak One Cycle Non-

Repetitive Surge Current

Non-Repetitive Avalanche Energy

Repetitive Avalanche Current

3.0

ƒ limited by T_Jmax V_A=1.5V_R

DC operation

Maximum Thermal Resistance

1.7

R_θJC

°C/W

Max. Junction Temperature

Max. Storage Temperature

T_J

T_stg

-65 to +200

°C

Electrical Characteristics

Characteristics

Max. Forward Voltage Drop

(per leg)

Symbol

V_F1

Condition

@ 7.5A, Pulse, T_J= 25 °C

@ 7.5A, Pulse, T_J= 125 °C

@V_R= 200V, Pulse,

T_J= 25 °C

Max.

0.92

0.76

0.05

Units

V_F2

I_R1

Max. Reverse Current

(per leg)

I_R2

C_T

@V_R= 200V, Pulse,

T_J= 125 °C

0.5

Max. Junction Capacitance

(per leg)

150

@V_R= 5V, T_C= 25 °C

f_SIG= 1MHz,

V_SIG= 50mV (p-p)

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