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SHB601052FN PDF预览

SHB601052FN

更新时间: 2024-11-25 03:32:15
品牌 Logo 应用领域
SENSITRON /
页数 文件大小 规格书
3页 57K
描述
SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE

SHB601052FN 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:MO-078
包装说明:HERMETIC SEALED, MO-078, TO-258, 5 PIN针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.45
应用:POWER配置:COMMON ANODE, 3 ELEMENTS
二极管元件材料:SILICON CARBIDE二极管类型:RECTIFIER DIODE
JEDEC-95代码:MO-078AAJESD-30 代码:R-MSFM-P5
最大非重复峰值正向电流:100 A元件数量:3
相数:3端子数量:5
最大输出电流:5 A封装主体材料:METAL
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:30 W
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SHB601052FN 数据手册

 浏览型号SHB601052FN的Datasheet PDF文件第2页浏览型号SHB601052FN的Datasheet PDF文件第3页 
SHB601052FP  
SHB601052FN  
SENSITRON  
Technical Data  
Datasheet 4290 REV. –  
SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE  
DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE IN A  
HERMETIC 5-PIN TO-258 (MO-078) PACKAGE.  
FEATURES:  
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES  
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR  
MAXIMUM RATINGS  
RATING  
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.  
SYMBOL  
PIV  
MAX.  
1200  
5
UNITS  
Volts  
PEAK INVERSE VOLTAGE  
MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC) PER LEG  
IO  
Amps  
Amps  
MAXIMUM REPETITIVE FORWARD SURGE CURRENT  
(t = 8.3ms, Sine) per leg, TC = 25 OC  
IFRM  
30  
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT  
IFSM  
100  
Amps  
(t = 10µs, pulse) per leg, TC = 25 OC  
MAXIMUM JUNCTION CAPACITANCE (Vr =5V) per leg  
MAXIMUM POWER DISSIPATION, TC = 25 OC  
CT  
Pd  
450  
30  
pF  
W
MAXIMUM THERMAL RESISTANCE, Junction to Case  
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE  
1.2  
RθJC  
°C/W  
°C  
Top, Tstg  
-55 to  
+175  
ELECTRICAL CHARACTERISTICS  
CHARACTERISTIC  
TYP  
MAX.  
UNITS  
1.65  
2.55  
1.80  
3.00  
MAXIMUM FORWARD VOLTAGE DROP (If = 5 A PER LEG) Vf TJ=25 °C  
Volts  
TJ=150 °C  
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) Ir TJ = 25 °C  
TJ = 150 °C  
0.05  
0.10  
0.20  
1.00  
mA  
nC  
28  
N/A  
TOTAL CAPACITANCE CHARGE (VR=1200V, IF=5A, di/dt=500A/µs and  
TJ=25°C) QC per leg  
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche  
capabilities of the device are limited.  
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially  
damaging conditions in their applications.  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com •  

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