SHB601052FP
SHB601052FN
SENSITRON__________
SEMICONDUCTOR
Technical Data
Datasheet 4290 REV. A
SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE
DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE 3-PHASE HALF WAVE BRIDGE IN A
HERMETIC 5-PIN TO-258 (MO-078) PACKAGE.
FEATURES:
•
•
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL
PIV
MAX.
1200
5
UNITS
Volts
PEAK INVERSE VOLTAGE
MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC) PER LEG
IO
Amps
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, TC = 25 OC
IFRM
30
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
IFSM
100
Amps
(t = 10μs, pulse) per leg, TC = 25 OC
MAXIMUM POWER DISSIPATION, TC = 25 OC
Pd
30
W
°C/W
°C
MAXIMUM THERMAL RESISTANCE, Junction to Case
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
1.2
RθJC
Top, Tstg
-55 to
+200
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
1.65
2.55
1.80
3.00
MAXIMUM FORWARD VOLTAGE DROP (If = 5 A PER LEG) Vf TJ=25 °C
Volts
TJ=150 °C
MAXIMUM REVERSE CURRENT (1200V PIV PER LEG) Ir TJ = 25 °C
TJ = 150 °C
0.05
0.10
0.20
1.00
mA
pF
MAXIMUM JUNCTION CAPACITANCE (Vr =5V) per leg
CT
450
28
N/A
nC
TOTAL CAPACITANCE CHARGE (VR=1200V, IF=5A, di/dt=500A/μs and
TJ=25°C) QC per leg
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially
damaging conditions in their applications.
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