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SHB645052E_09 PDF预览

SHB645052E_09

更新时间: 2024-11-25 09:26:55
品牌 Logo 应用领域
SENSITRON /
页数 文件大小 规格书
3页 47K
描述
HERMETIC QUAD SILICON CARBIDE RECTIFIER

SHB645052E_09 数据手册

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SHB645052E  
SENSITRON  
SEMICONDUCTOR  
Technical Data  
Datasheet 4287 REV. A  
HERMETIC QUAD SILICON CARBIDE RECTIFIER  
DESCRIPTION: FOUR 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIERS IN A HERMETIC  
DUAL TO-257 PACKAGE. IDEAL FOR CONNECTION AS A BRIDGE.  
FEATURES:  
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES  
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR  
CAN BE USED AS A SINGLE PHASE FULL WAVE BRIDGE BY EXTERNALLY CONNECTING  
TWO PINS  
MAXIMUM RATINGS  
RATING  
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.  
SYMBOL  
MAX.  
1200  
10  
UNITS  
Volts  
PEAK INVERSE VOLTAGE  
PIV  
IO  
MAXIMUM DC OUTPUT CURRENT (With TC = 65 OC) WHEN USED AS  
A BRIDGE  
Amps  
MAXIMUM REPETITIVE FORWARD SURGE CURRENT  
(t = 8.3ms, Sine) per leg, TC = 25 OC  
IFRM  
30  
Amps  
Amps  
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT  
IFSM  
100  
(t = 10μs, pulse) per leg, TC = 25 OC  
MAXIMUM POWER DISSIPATION, TC = 25 OC  
Pd  
30  
W
MAXIMUM THERMAL RESISTANCE, Junction to Case (Connected as a  
BRIDGE)  
1.0  
RθJC  
°C/W  
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*  
Top, Tstg  
-55 to  
+200  
°C  
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device  
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 •  
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com •  

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