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SH32N65DM6AG PDF预览

SH32N65DM6AG

更新时间: 2023-12-20 18:45:09
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
14页 471K
描述
Automotive-grade N-channel 650 V, 89 mOhm typ., 32 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package

SH32N65DM6AG 数据手册

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SH32N65DM6AG  
Datasheet  
Automotive-grade N-channel 650 V, 89 mΩ typ., 32 A MDmesh DM6  
halfbridge topology Power MOSFET in an ACEPACK SMIT package  
9
Features  
8
7
V
R
DS(on)  
max.  
I
D
Order code  
DS  
1
6
SH32N65DM6AG  
650 V  
97 mΩ  
32 A  
3
4
6
7
AQG 324 qualified  
8
9
Half-bridge power module  
650 V blocking voltage  
4
Fast recovery body diode  
Very low switching energies  
Low package inductance  
3
1
ACEPACK SMIT  
9 (DC+)  
GADG060720221002SA  
Dice on direct bond copper (DBC) substrate  
Low thermal resistance  
Isolation rating of 3.4 kVrms/min  
1 (GHS)  
2 (KHS)  
Applications  
7 (U)  
3, 4 (NC)  
Switching applications  
6 (GLS)  
5 (KLS)  
Description  
This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT  
is a very compact and rugged power module in a surface mount package for easy  
assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low  
thermal resistance coupled with an isolated top-side thermal pad. The high design  
flexibility of the package enables several configurations, including phase legs, boost,  
and single switch through different combinations of the internal power switches.  
8 (DC-)  
Product status link  
SH32N65DM6AG  
Product summary  
Order code  
Marking  
SH32N65DM6AG  
H32N65DM6  
Package  
Packing  
ACEPACK SMIT  
Tape and reel  
DS14049 - Rev 2 - October 2022  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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