Datasheet > SGT27B13

SGT27B13

更新时间： 2024-02-28 13:32:51

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	25K
描述
SINGLE BIDIRECTIONAL BREAKOVER DIODE,345V V(BO) MAX,TO-202VAR

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SGT27B13 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	IN-LINE, R-PSIP-T2	Reach Compliance Code：	unknown
HTS代码：	8541.30.00.80	风险等级：	5.69
其他特性：	DIFFUSED ZENER IN GATE REGION	最大转折电压：	375 V
外壳连接：	TERMINAL 2	配置：	SINGLE
最大维持电流：	130 mA	标称维持电流：	130 mA
JESD-30 代码：	R-PSIP-T2	JESD-609代码：	e0
最大非重复峰值正向电流：	30 A	元件数量：	1
端子数量：	2	最高工作温度：	85 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
子类别：	Silicon Surge Protectors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	SYMMETRICAL BOD	Base Number Matches：	1

SGT27B13 数据手册

SGT23B13, SGT27B13, SGT27B27

TO-202 Modiﬁed

Mechanical Dimensions

2 LEAD JEDEC STYLE TO-202 SHORT TAB PLASTIC PACKAGE

ACTIVE ELEMENT

b₂

INCHES MILLIMETERS

SYMBOL

MIN

MAX

0.150

0.028

0.055

0.280

0.022

0.340

0.360

MIN

3.31

0.61

1.15

6.86

0.46

8.13

8.64

MAX

3.81

0.71

1.39

7.11

0.55

8.63

9.14

NOTES

0.130

0.024

0.045

0.270

0.018

0.320

0.340

2, 3

1, 2, 3

b₁

0.200 BSC

5.08 BSC

0.080

0.039

0.410

0.080

0.100

0.049

0.440

0.100

2.04

1.00

2.54

1.24

10.42

2.04

11.17

2.54

NOTES:

e₁

1. Lead dimension and ﬁnish uncontrolled in L .

2. Lead dimension (without solder).

3. Add typically 0.002 inches (0.05mm) for solder coating.

4. Position of lead to be measured 0.250 inches (6.35mm) from bottom

of dimension D.

5. Position of lead to be measured 0.100 inches (2.54mm) from bottom

of dimension D.

6. Controlling dimension: Inch.

7. Revision 3 dated 10-94.

Ordering Information

SGT 27

Holding Current in mA divided by 10

Type of Surgector

U: Unidirectional

B: Bidirectional

S: SCR

Off-State Voltage Rating Divided by 10

Surgector

Terms and Symbols

(Maximum Off-State Voltage) - Maximum off-state

(Reverse Current) - Maximum value of reverse current

voltage (DC or peak) which may be applied continuously.

that results from the application of the maximum reverse

voltage (V ).

(Maximum Reverse Voltage) - Maximum reverse-

blocking voltage (DC or peak) which may be applied.

V (Clamping Voltage) - Off-state voltage at a speciﬁed

current.

(Maximum Peak Surge Current) - Maximum

TSM

nonrepetitive current which may be allowed to ﬂow for the

time state.

(Breakdown Voltage) - Voltage at which the device

switches from the off-state to the on-state.

T (Ambient Operating Temperature) - Ambient

I (Holding Current) - Minimum on-state current that will

temperature range permitted during operation in a circuit.

hold the device in the on-state after it has been latched on.

(Storage Temperature) - Temperature range

V (On-State Voltage) - Voltage across the main terminals

for a speciﬁed on-state current.

STG

permitted during storage.

(Off-State Current) - Maximum value of off-state

C (Main Terminal Capacitance) - Capacitance between

the main terminals at a speciﬁed off-state voltage.

current that results from the application of the maximum

off-state voltage (V ).

7-14

1 2 34

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与SGT27B13相关器件

型号	品牌	描述	获取价格	数据表
SGT27B13A	ROCHESTER	360V, SYMMETRICAL BOD, MODIFIED TO-202, 2 PIN	获取价格
SGT27B13B	ROCHESTER	375V, SYMMETRICAL BOD, MODIFIED TO-202, 2 PIN	获取价格
SGT27B27A	RENESAS	SGT27B27A	获取价格
SGT27B27B	RENESAS	SINGLE BIDIRECTIONAL BREAKOVER DIODE,375V V(BO) MAX,TO-202VAR	获取价格
SGT27B32	RENESAS	Silicon Surge Protector, 390V V(BO) Max	获取价格
SGT27S10	LITTELFUSE	Silicon Unilateral Switch, 285V, MODIFIED TO-202, 3 PIN	获取价格

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