生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.84 | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 11 V |
最大漏极电流 (Abs) (ID): | 0.055 A | 最大漏极电流 (ID): | 0.055 A |
FET 技术: | METAL SEMICONDUCTOR | 最大反馈电容 (Crss): | 40 pF |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DUAL GATE, DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 0.15 W | 认证状态: | Not Qualified |
子类别: | FET RF Small Signal | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SGM2006M | SONY |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars |
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SGM2006P | SONY |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars |
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SGM2006-XN5/TR | SGMICRO |
获取价格 |
Low Power, Low Dropout, 150mA, RF - Linear Regulators |
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SGM2007 | SGMICRO |
获取价格 |
Low Power, Low Dropout, 300mA, RF - Linear Regulators |
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SGM2007-1.8 | SGMICRO |
获取价格 |
Low Power, Low Dropout, 300mA, RF - Linear Regulators |
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SGM2007-1.8XN5/TR | SGMICRO |
获取价格 |
Low Power, Low Dropout, 300mA, RF - Linear Regulators |
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SGM2007-2.5 | SGMICRO |
获取价格 |
Low Power, Low Dropout, 300mA, RF - Linear Regulators |
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SGM2007-2.5XN5/TR | SGMICRO |
获取价格 |
Low Power, Low Dropout, 300mA, RF - Linear Regulators |
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SGM2007-2.7 | SGMICRO |
获取价格 |
Low Power, Low Dropout, 300mA, RF - Linear Regulators |
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SGM2007-2.7XN5/TR | SGMICRO |
获取价格 |
Low Power, Low Dropout, 300mA, RF - Linear Regulators |
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