5秒后页面跳转
SGL41-60-HE3/61T PDF预览

SGL41-60-HE3/61T

更新时间: 2024-01-31 13:04:23
品牌 Logo 应用领域
威世 - VISHAY 瞄准线二极管
页数 文件大小 规格书
4页 82K
描述
DIODE 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC, MELF-2, Signal Diode

SGL41-60-HE3/61T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-213AB
包装说明:O-PELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.17
其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.7 V
JEDEC-95代码:DO-213ABJESD-30 代码:O-PELF-R2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SGL41-60-HE3/61T 数据手册

 浏览型号SGL41-60-HE3/61T的Datasheet PDF文件第2页浏览型号SGL41-60-HE3/61T的Datasheet PDF文件第3页浏览型号SGL41-60-HE3/61T的Datasheet PDF文件第4页 
BYM13-20 thru BYM13-60, SGL41-20 thru SGL41-60  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• MELF Schottky rectifier  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 250 °C  
DO-213AB  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
1.0 A  
20 V to 60 V  
30 A  
MECHANICAL DATA  
Case: DO-213AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
VF  
0.50 V, 0.70 V  
125 °C, 150 °C  
Tj max.  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Two bands indicate cathode end 1st band  
denotes device type 2nd band denotes voltage type  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL BYM13-20 BYM13-30 BYM13-40 BYM13-50 BYM13-60  
UNIT  
Denotes Schottky devices: 1st band is orange  
Polarity color bands (2nd band) voltage type  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
SGL41-20 SGL41-30 SGL41-40 SGL41-50 SGL41-60  
Gray  
20  
Red  
30  
Orange  
40  
Yellow  
50  
Green  
60  
VRRM  
VRMS  
VDC  
V
V
V
A
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
20  
30  
40  
50  
60  
Maximum average forward rectified current (see Fig.  
IF(AV)  
1.0  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
30  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 55 to + 125  
- 55 to + 150  
TSTG  
- 55 to + 150  
°C  
Document Number 88548  
26-Jun-06  
www.vishay.com  
1

与SGL41-60-HE3/61T相关器件

型号 品牌 获取价格 描述 数据表
SGL41-60HE3/96 VISHAY

获取价格

DIODE SCHOTTKY 60V 1A DO213AB
SGL41-60HE3/97 VISHAY

获取价格

SCHOTTKY 60V 1A 2PIN DO-213AB - Tape and Reel
SGL41-60-HE3/97 VISHAY

获取价格

DIODE 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB, ROHS COMPLIANT, PLASTIC, MELF-2, Signal
SGL41-xx VISHAY

获取价格

Surface Mount Schottky Barrier Rectifier
SGL50N60 FAIRCHILD

获取价格

Short Circuit Rated IGBT
SGL50N60RUF FAIRCHILD

获取价格

Short Circuit Rated IGBT
SGL50N60RUFD FAIRCHILD

获取价格

Short Circuit Rated IGBT
SGL50N60RUFDGTU FAIRCHILD

获取价格

Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-264AA, TO-264, 3
SGL50N60RUFDTU ONSEMI

获取价格

IGBT,600V,50A,短路额定
SGL50N60RUFDTU FAIRCHILD

获取价格

600 V, 50 A Short Circuit Rated IGBT