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SGL5N150UF PDF预览

SGL5N150UF

更新时间: 2024-10-01 22:43:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率控制瞄准线双极性晶体管局域网
页数 文件大小 规格书
6页 294K
描述
General Description

SGL5N150UF 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-264AA包装说明:TO-264, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.87Is Samacsys:N
其他特性:LOW CONDUCTION LOSS最大集电极电流 (IC):10 A
集电极-发射极最大电压:1500 V配置:SINGLE
最大降落时间(tf):120 ns门极发射器阈值电压最大值:4 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):100 ns标称接通时间 (ton):25 ns
Base Number Matches:1

SGL5N150UF 数据手册

 浏览型号SGL5N150UF的Datasheet PDF文件第2页浏览型号SGL5N150UF的Datasheet PDF文件第3页浏览型号SGL5N150UF的Datasheet PDF文件第4页浏览型号SGL5N150UF的Datasheet PDF文件第5页浏览型号SGL5N150UF的Datasheet PDF文件第6页 
IGBT  
SGL5N150UF  
General Description  
Features  
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)  
provides low conduction and switching losses.  
SGL5N150UF is designed for the Switching Power  
Supply applications.  
High Speed Switching  
Low Saturation Voltage : V  
High Input Impedance  
= 4.7 V @ I = 5A  
CE(sat)  
C
Application  
Switching Power Supply - High Input Voltage Off-line Converter  
C
E
G
TO-264  
G
C
E
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGL5N150UF  
Units  
V
V
V
Collector-Emitter Voltage  
1500  
CES  
GES  
Gate-Emitter Voltage  
± 20  
V
Collector Current  
@ T  
=
25°C  
10  
A
C
I
I
C
Collector Current  
@ T = 100°C  
5
20  
A
C
Pulsed Collector Current  
A
CM (1)  
P
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from Case for 5 Seconds  
@ T = 25°C  
125  
W
W
°C  
°C  
D
C
@ T = 100°C  
50  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
1
θJC  
θJA  
Thermal Resistance, Junction-to-Ambient  
--  
25  
©2003 Fairchild Semiconductor Corporation  
SGL5N150UF Rev. B  

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