SGL25N120RUFD

更新时间： 2024-02-19 20:08:58

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
8页	569K
描述
Short Circuit Rated IGBT

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SGL25N120RUFD 数据手册

IGBT

SGL25N120RUFD

Short Circuit Rated IGBT

General Description

Features

Fairchild's RUFD series of Insulated Gate Bipolar

Transistors (IGBTs) provides low conduction and switching

losses as well as short circuit ruggedness. The RUFD

series is designed for applications such as motor control,

uninterrupted power supplies (UPS) and general inverters

where short circuit ruggedness is a required feature.

•

Short circuit rated 10µs @ T = 100°C, V = 15V

High speed switching

Low saturation voltage : V

High input impedance

= 2.3 V @ I = 25A

CE(sat)

CO-PAK, IGBT with FRD : t = 90ns (typ.)

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-264

G C E

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Description

SGL25N120RUFD

Units

Collector-Emitter Voltage

1200

CES

GES

Gate-Emitter Voltage

± 25

Collector Current

@ T

25°C

Collector Current

@ T = 100°C

Pulsed Collector Current

CM (1)

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

@ T = 100°C

150

@ T = 100°C

µs

°C

@ T

25°C

270

@ T = 100°C

108

-55 to +150

stg

300

°C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Typ.

Max.

Units

°C/W

(IGBT)

0.46

0.72

θJC

θJA

(DIODE)

Thermal Resistance, Junction-to-Ambient

SGL25N120RUFD Rev. B

12 3 4 5 6 7 8

中文翻译

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