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SGC4363ZSQ

更新时间： 2024-01-03 06:37:46
品牌 Logo 应用领域
威讯 - RFMD 射频微波
页数 文件大小 规格书
6页 336K
描述
50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

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SGC4363ZSQ 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：TSSOP6,.08Reach Compliance Code：compliant
ECCN代码：5A991.GHTS代码：8542.33.00.01
风险等级：5.84特性阻抗：50 Ω
构造：COMPONENT增益：11.2 dB
最大输入功率 (CW)：12 dBm安装特点：SURFACE MOUNT
功能数量：1端子数量：6
最大工作频率：4000 MHz最小工作频率：50 MHz
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装等效代码：TSSOP6,.08
电源：3 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave Amplifiers最大压摆率：60 mA
表面贴装：YES技术：BIPOLAR

SGC4363ZSQ 数据手册

 浏览型号SGC4363ZSQ的Datasheet PDF文件第1页浏览型号SGC4363ZSQ的Datasheet PDF文件第3页浏览型号SGC4363ZSQ的Datasheet PDF文件第4页浏览型号SGC4363ZSQ的Datasheet PDF文件第5页浏览型号SGC4363ZSQ的Datasheet PDF文件第6页 
SGC4363Z  
Absolute Maximum Ratings  
Parameter  
Caution! ESD sensitive device.  
Rating  
110  
Unit  
mA  
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may  
cause permanent damage to the device. Extended application of Absolute Maximum  
Rating conditions to the device may reduce device reliability. Specified typical perfor-  
mance or functional operation of the device under Absolute Maximum Rating condi-  
tions is not implied.  
Device Current (I  
)
CE  
Device Voltage (V  
)
4
CE  
RF Input Power* (See Note)  
Junction Temp (T )  
12  
dBm  
°C  
The information in this publication is believed to be accurate and reliable. However, no  
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any  
infringement of patents, or other rights of third parties, resulting from its use. No  
license is granted by implication or otherwise under any patent or patent rights of  
RFMD. RFMD reserves the right to change component circuitry, recommended appli-  
cation circuitry and specifications at any time without prior notice.  
+150  
J
Operating Temp Range (T )  
L
-40 to +85  
°C  
°C  
Storage Temp  
+150  
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free  
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric  
materials and red phosphorus as a flame retardant, and <2% antimony in  
solder.  
ESD Rating - Human Body Model  
(HBM)  
Class 1C  
Moisture Sensitivity Level  
MSL 1  
*Note: Load condition Z =50  
L
Operation of this device beyond any one of these limits may cause permanent dam-  
age. For reliable continuous operation, the device voltage and current must not  
exceed the maximum operating values specified in the table on page one.  
Bias Conditions should also satisfy the following expression:  
I V <(T -T )/R , j-l and T =T  
LEAD  
D
D
J
L
TH  
L
Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)  
Parameter  
Unit  
100  
500  
850  
1950  
2400  
3500  
MHz  
18.0  
33.5  
MHz  
17.7  
30.5  
MHz  
17.1  
28.5  
MHz  
12.7  
26.5  
MHz  
11.8  
25.5  
MHz  
9.4  
22.5  
Small Signal Gain (G)  
Output Third Order Intercept Point (OIP )  
dB  
dBm  
3
Output Power at 1dB Compression (P  
)
dBm  
14.9  
14.0  
13.3  
12.4  
11.8  
10.0  
1dB  
Input Return Loss (IRL)  
Output Return Loss (ORL)  
dB  
dB  
dB  
26.5  
25.0  
20.0  
21.5  
21.0  
21.0  
18.5  
17.5  
21.5  
13.5  
12.5  
20.0  
14.0  
12.0  
19.5  
12.0  
11.0  
19.0  
Reverse Isolation (S  
)
12  
Noise Figure (NF)  
dB  
2.9  
3.1  
3.5  
4.0  
4.2  
5.1  
Test Conditions: V =3V I =54mA Typ. OIP Tone Spacing=1MHz, P per tone=-5dBm  
OUT  
D
D
3
T =25°C Z =Z =50  
L
S
L
Typical Performance with Bias Tee, VD=3V, ID=54mA  
OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)  
P1dB vs. Frequency  
17  
15  
13  
11  
9
36  
34  
32  
30  
28  
26  
25C  
25C  
-40C  
85C  
24  
-40C  
22  
20  
85C  
7
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
Frequency (GHz)  
Frequency (GHz)  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
2 of 6  
DS111011  
123456

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