SFT5671 and SFT5672
SFT5672E
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
30 – 50 AMPS
90 - 130 Volts
High Power
Part Number / Ordering Information 1/
SFT5671 __ __ __
SFT5672 __ __ __
SFT5672E __ __ __
NPN Transistors
│
│
│
│
│
│
│
└
│
│
│
│
└
└ Screening __ = No Screening
TX = TX Level
Features:
TXV = TXV Level
•
High Frequency transistor with BVCEO to 130 Volts
Enhanced SOA capability and Fast Switching
High Power Dissipation 140 Watts
S = S Level
Lead Bend 3/ 4/ __ = Straight Leads
UB = Up Bend
•
•
•
•
200oC Operating Temperature
DB = Down Bend
Package 3/ /3 = TO-3
TX, TXV, S-Level Screening per MIL-PRF-19500
available; consult factory
M = TO-254
S1 = SMD 1
•
Enhanced performance version: SFT5672E
Maximum Ratings
Symbol
Value
Units
SFT5671
SFT5672
90
Collector – Emitter Voltage
120
130
VCEO
Volts
SFT5672E
SFT5671
120
150
250
Collector – Base Voltage
SFT5672
VCBO
Volts
SFT5672E
7
Emitter – Base Voltage
Collector Current
VEBO
IC
Volts
Amps
Amps
SFT5671, SFT5672
SFT5672E
30
50
10
Base Current
IB
TO-3 (TC ≤ 25ºC)
TO-254 (TC ≤ 25ºC)
SMD 1 (TC ≤ 25ºC)
140
116
175
Total Power Dissipation
PD
TJ & TSTG
R0JC
Watts
ºC
-65 to +200
Operating & Storage Temperature
TO-3
TO-254
SMD 1
1.25
1.5
Maximum Thermal Resistance
(Junction to Case)
ºC/W
1.0
TO-3 (/3)
TO-254 (M)
SMD 1(S1)
3/ For Package Outlines Contact Factory.
4/ Up and Down Bend Configurations are Available for ‘M’ (TO-254) Packages Only.
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
NOTE: All specifications are subject to change without notification.
DATA SHEET #: TR0076C
DOC
SCD's for these devices should be reviewed by SSDI prior to release.